IPP65R190E6 Infineon Technologies, IPP65R190E6 Datasheet - Page 9

• Manufacturer Part Number: IPP65R190E6
• Manufacturer: Infineon Technologies

Specifications of IPP65R190E6

• Packages: PG-TO220-3
• Vds (max): 650.0 V
• Package: TO-220
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 66.0 A

Final Data Sheet
Table 12
Table 13
Safe operating area
Non FullPAK
I
Safe operating area
Non FullPAK
I
D
D
=f(V
=f(V
DS
DS
);
);
T
T
C
C
=25 °C; V
=80 °C; V
T
T
GS
GS
C
C
=25 °C
=80 °C
> 7V; D=0; parameter t
> 7V; D=0; parameter t
p
p
9
Safe operating area
FullPAK
I
Safe operating area
FullPAK
I
D
D
=f(V
=f(V
DS
DS
650V CoolMOS™ E6 Power Transistor
);
);
T
T
C
C
=25 °C; V
=80 °C; V
Electrical characteristics diagrams
T
T
GS
GS
C
C
=25 °C
=80 °C
> 7V; D=0; parameter t
> 7V; D=0; parameter t
Rev. 2.0, 2011-05-13
IPx65R190E6
p
p