TLE7250GVIO Infineon Technologies, TLE7250GVIO Datasheet - Page 14

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TLE7250GVIO

Manufacturer Part Number
TLE7250GVIO
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of TLE7250GVIO

Packages
PG-DSO-8
Transmission Ratemax
1.0 Mbit/s
Quiescent Current (max.)
< 15 µA @ 5V standby
Bus Wake-up Capability
No
Additional Features
NEN; Vio
Wake-up Inputs
No

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6.2
Table 4
Pos.
Supply Voltage
6.2.1
6.2.2
Thermal Parameter
6.2.3
1) Not subject to production test, specified by design
Note: Within the functional range the IC operates as described in the circuit description. The electrical
6.3
Note: This thermal data was generated in accordance with JEDEC JESD51 standards. For more information,
Table 5
Pos.
Thermal Resistance
6.3.1
Thermal Shut-down Junction Temperature
6.3.2
6.3.3
1) Not subject to production test, specified by design
2) The
Data Sheet
(TLE7250GVIO) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu).
characteristics are specified within the conditions given in the associated electrical characteristics table.
please visit www.jedec.org.
R
Parameter
Junction to ambient
Thermal shut-down
temperature
Thermal shut-down
hysteresis
thJA
Parameter
Transceiver supply voltage
Logical supply voltage
Junction temperature
value specified, is according to Jedec JESD51-2,-7 at natural convection on the FR4 2s2p board; The product
Functional Range
Operating Range
Thermal Characteristics
Thermal Resistance
1)
1)
Symbol
R
T
ΔT
JSD
thJA
Symbol
V
V
T
Limit Values
Min.
150
j
CC
IO
14
Min.
4.75
3.00
-40
Typ.
130
175
10
Limit Values
Max.
200
Max.
5.25
5.25
150
Unit
K/W
°C
K
General Product Characteristics
Unit
V
V
°C
Remarks
2)
Rev. 1.0, 2012-03-14
Conditions
1)
TLE7250GVIO

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