BTS 3142D Infineon Technologies, BTS 3142D Datasheet - Page 4

• Manufacturer Part Number: BTS 3142D
• Manufacturer: Infineon Technologies

Specifications of BTS 3142D

• Packages: PG-TO252-3
• Channels: 1.0
• Vds (max): 42.0 V
• Id(nom): 4.6 A
• Rds (on) (max): 28.0 mOhm
• Id(lim) (min): 24.0 A

Datasheet
1 Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
Electrical Characteristics
Parameter
at T
Inverse Diode
Inverse diode forward voltage
I
t
Dynamic Characteristics
Turn-on time
R
Turn-off time
R
Slew rate on
R
Slew rate off
R
Protection Functions
Thermal overload trip temperature
Input current protection mode
Input current protection mode
T
Unclamped single pulse inductive energy
I
F
P
D
j
L
L
L
L
= 51 A, t
= 300 µs
= 150 °C
= 4.6 A, T
= 4.7 Ω, V
= 4.7 Ω, V
= 4.7 Ω, V
= 4.7 Ω, V
j
= 25°C, unless otherwise specified
m
j
= 250 µs, V
= 25 °C, V
IN
IN
IN
IN
= 0 to 10 V, V
= 10 to 0 V, V
= 0 to 10 V, V
= 10 to 0 V, V
V
V
70 to 50% V
50 to 70% V
IN
IN
to 90% I
to 10% I
1)
bb
IN
= 12 V
= 0 V,
D
D
bb
bb
bb
bb
:
:
bb
bb
= 12 V
= 12 V
:
= 12 V
:
= 12 V
2)
4
Symbol
t
t
-dV
dV
V
T
I
I
E
on
off
IN(Prot)
IN(Prot)
SD
jt
AS
DS
DS
/dt
/dt
off
on
Smart Low Side Power Switch
min.
150
3.5
Power HITFET BTS 3142D
-
-
-
-
-
-
-
Values
typ.
220
180
175
0.3
0.3
1.0
60
60
-
Rev. 1.3, 2006-12-22
max.
120
120
400
400
1.5
1.5
-
-
-
Unit
µs
V/µs
V
°C
µA
J