BTS 3142D Infineon Technologies, BTS 3142D Datasheet - Page 2

• Manufacturer Part Number: BTS 3142D
• Manufacturer: Infineon Technologies

Specifications of BTS 3142D

• Packages: PG-TO252-3
• Channels: 1.0
• Vds (max): 42.0 V
• Id(nom): 4.6 A
• Rds (on) (max): 28.0 mOhm
• Id(lim) (min): 24.0 A

Datasheet
1 Not tested, specified by design.
2 V
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Thermal resistance
junction - case:
SMD: junction - ambient
@ min. footprint
@ 6 cm
Maximum Ratings at T
Parameter
Drain source voltage
Drain source voltage for short circuit protection
T
Continuous input current
-0.2V ≤ V
V
Operating temperature
Storage temperature
Power dissipation
T
6cm
Unclamped single pulse inductive energy
Load dump protection V
V
R
Electrostatic discharge voltage
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
j
C
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
IN
IN
L
= -40...150°C
= 85 °C
= 3 Ω, V
< -0.2V or V
= 0 and 10 V, t
2
cooling area , T
2
cooling area
IN
A
≤ 10V
= 13.5 V
IN
> 10V
d
= 400 ms, R
A
3)
= 85 °C
LoadDump
j
= 25°C, unless otherwise specified
(Human Body Model)
I
2)
= 2 Ω,
= V
A
+ V
1)
S
2
R
R
Symbol
V
V
I
T
T
P
E
V
V
IN
j
stg
DS
DS(SC)
tot
AS
LD
ESD
thJC
thJA
Smart Low Side Power Switch
Power HITFET BTS 3142D
-55 ... +150
-40 ...+150
| I
no limit
IN
Value
115
67.5
1.1
1.1
3.5
55
59
42
28
| ≤ 2
2
Rev. 1.3, 2006-12-22
K/W
Unit
V
mA
°C
W
J
V
kV