BTS 50060-1TEA Infineon Technologies, BTS 50060-1TEA Datasheet - Page 12

• Manufacturer Part Number: BTS 50060-1TEA
• Manufacturer: Infineon Technologies

Specifications of BTS 50060-1TEA

• Packages: PG-TO252-5
• Channels: 1.0
• Ron @ Tj = 25°c: 6.0 mOhm
• Recommended Operating Voltage Min.: 4.7 V
• Recommended Operating Voltage Max.: 28.0 V
• Il(sc): 60.0 A

5
5.1
The power stage is built by a P-channel vertical power MOSFET (DMOS). The ON-state resistance
depends on the supply voltage
the typical ON-state resistance. The behavior in reverse polarity is described in
the input pin (see
power DMOS to switch OFF.
5.1.1
Defined slew rates for turn ON and OFF as well as edge shaping support PWM’ing of the load while achieving
lowest EMC emission at minimum switching losses.
load.
Figure 10
5.1.2
When switching OFF inductive loads, the output voltage
inductance ( -d
Datasheet
High current PROFET
Functional Description
Power Stage
Switching a Resisitve Load
Switching a resistive load
Switching an Inductive Load - Infineon
i
L
/dt = -
Chapter
V
V
90% V
70% V
30% V
10% V
IN(H),min
IN(L),max
v
TM
P
V
L
/L ; -
OUT
Loss
V
IN
I
5.2) causes the power DMOS to switch ON. A LOW signal at the input pin causes the
S
S
S
S
L
V
OUT
V
S
≅ -
as well as the junction temperature
V
L
t
ON
). To prevent the destruction of the device due to high voltages, there is a
E
t
ON
r
(dV/dt)
ON
Figure 10
12
V
OUT
(dV/dt)
shows the typical timing when switching a resistive
®
drops below ground potential due to the involved
SMART CLAMPING
t
OFF
OFF
T
E
j
.
OFF
t
f
Figure 25
Chapter
shows the dependencies for
SwitchingResistiveLoad.emf
Functional Description
5.3.4. A HIGH signal at
Rev. 1.2, 2011-09-01
BTS50060-1TEA
t
t
t
t
R
DS(ON)