BTN 7975B Infineon Technologies, BTN 7975B Datasheet - Page 3

• Manufacturer Part Number: BTN 7975B
• Manufacturer: Infineon Technologies

Specifications of BTN 7975B

• Packages: PG-TO263-7
• Operating Range: 5.5 - 28.0 V
• Rds (on) (typ): 16.0 mOhm
• Id(lim): 70.0 A
• Iq (typ): 7.0 µA
• Diagnosis: OV, OT, OC-failure flag, status flag

High Current PN Half Bridge
NovalithIC™
1
Features
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Description
The BTN7975B is an integrated high current half bridge for motor drive applications. It is part of the NovalithIC™
family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver
IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing
EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs,
diagnosis with status flag, slew rate adjustment, dead time generation and protection against overtemperature,
overvoltage, undervoltage, overcurrent and short circuit.
The BTN7975B provides a cost optimized solution for protected high current PWM motor drives with very low
board space consumption.
Type
BTN7975B
Data Sheet
Path resistance of max. 30.5 mΩ @ 150 °C (typ. 16 mΩ @ 25 °C)
High Side: max. 12.8 mΩ @ 150 °C (typ. 7 mΩ @ 25 °C)
Low Side: max. 17.7 mΩ @ 150 °C (typ. 9 mΩ @ 25 °C)
Low quiescent current of typ. 7 μA @ 25 °C
PWM capability of up to 25 kHz combined with active freewheeling
Switched mode current limitation for reduced power dissipation
in overcurrent
Current limitation level of 50 A min. / 70 A typ. (low side)
Status flag diagnosis
Overtemperature shut down with latch behaviour
Overvoltage lock out
Undervoltage shut down
Driver circuit with logic level inputs
Adjustable slew rates for optimized EMI
Operation up to 28V
Green Product (RoHS compliant)
AEC Qualified
Overview
Package
PG-TO263-7-1
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Marking
BTN7975B
PG-TO263-7-1
Rev. 1.0, 2009-03-31
BTN7975B