BTN 7975B Infineon Technologies, BTN 7975B Datasheet - Page 22

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BTN 7975B

Manufacturer Part Number
BTN 7975B
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTN 7975B

Packages
PG-TO263-7
Operating Range
5.5 - 28.0 V
Rds (on) (typ)
16.0 mOhm
Id(lim)
70.0 A
Iq (typ)
7.0 µA
Diagnosis
OV, OT, OC-failure flag, status flag
6
Note: The following information is given as a hint for the implementation of the device only and shall not be
6.1
Figure 14
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
6.2
Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances
have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The
BTN7975B has no separate pin for power ground and logic ground. Therefore it is recommended to assure that
the offset between the ground connection of the slew rate resistor, the status flag resistor and ground pin of the
device (GND / pin 1) is minimized. If the BTN7975B is used in a H-bridge or B6 bridge design, the voltage offset
between the GND pins of the different devices should be small as well.
A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching
phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this
capacitor would be about 470 nF.
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series
resistors in the range of 10 kΩ.
Data Sheet
regarded as a description or warranty of a certain functionality, condition or quality of the device.
470Ω
R
ST12
I/O
XC866
10kΩ
Application Information
Application Example
Application Example: H-Bridge with two BTN7975B
Layout Considerations
R
IN1
Microcontroller
0..51k Ω
I/O I/O
R
SR1
R
10kΩ
INH1
BTN7975
I/O
INH
ST
IN
SR
Reset
Vdd
Vss
I/O
22µF
C
Q
GND
OUT
VS
High Current H-Bridge
47nF
C
D
470nF
C
Voltage Regulator
Sc1
WO
RO
Q
D
22
M
4278G
GND
TLE
470nF
C
Sc2
I
VS
OUT
GND
High Current PN Half Bridge
470µF
C
S
BTN7975
Reverse Polarity
10V
D
1k Ω
Z1
R
INH
1
SR
Application Information
ST
IN
Protection
Rev. 1.0, 2009-03-31
50P03L
SPD
R
10k Ω
INH2
0..51kΩ
R
BTN7975B
SR1
10kΩ
R
IN2
V
S

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