T1503N Infineon Technologies, T1503N Datasheet - Page 2

• Manufacturer Part Number: T1503N
• Manufacturer: Infineon Technologies

Specifications of T1503N

• Vrrm (max): 7,500.0 - 8,000.0 V
• Itsm: 55,000.0 A
• Itavm: 1770 (180 ° el sin)
• Housing: Dia 150mm height 40mm / Ceramic
• Configuration: Light Triggered Thyristors / SCR Diode Discs

Date of Publication: 2011-05-02
Phase Control Thyristor
Durchlaßstrom-Effektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Zündverzug
gate controlled delay time
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Rückwärts-Spitzensperrspannung
repetitive peak and reverse voltage
Charakteristische Werte / characteristic values
Schutzzündspannung (statisch)
protective break over voltage
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
minimale Zündlichtleistung
minimum gate trigger light power
Haltestrom
holding current
Einraststrom
latching current
Rückwärts-Sperrstrom
reverse blocking current
approved by: JP
prepared by: TM
Netz-Thyristor
v
T

A

B

i
T

C

Ln
400A  i
i (
T
Elektrische Eigenschaften

F
date of publication:
) 1
 5000A

D

Technische Information /
revision:
technical information
i
T
T1503N
Revision: 8.0
2011-05-02
T
T
T
T
T
T
T
T
T
DIN IEC 60747-6
f = 50 Hz, P
T
5.Kennbuchstabe / 5
T
Typischer Degradationsfaktor ist 0,16%/K
für Tvj = 0°C..25°C
Typical de-rating factor of 0,16%/K is
applicable for T
T
T
T
T
T
T
T
v
DIN IEC 60747-6
T
P
T
P
R
vj
C
C
C
C
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
LM
vj
LM
= V
= 25 °C, vD = 1000V ,
= -40°C... T
= 85 °C
= 85 °C
= 70 °C
= 55 °C
= 25 °C, t
= T
= 25 °C, t
= T
= T
= 25°C … T
= T
= T
= T
= T
= 25°C, v
= 25°C
= T
8.0
= 25°C, v
= 40mW, t
= 40mW, t
RRM
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
, t
, t
, v
, i
LM
P
P
D
P
P
D
T
D
vj
= 10 ms
= 10 ms
= 150V
= 10 ms
= 10 ms
= 40mW, t
= 0,67 V
= 4000A, v
rise
vj max
= 150V,
vj max
= 0°C..25°C
rise
= 0,5µs
= 0,5µs
th
letter H
DRM
rise
D
= 150V
= 0,5µs
V
I
I
I
I²t
(di
(dv
V
v
V
r
typ.
max.
P
I
I
i
t
TRMSM
TAVM
TSM
H
L
R
gd
T
T
RRM
BO
(TO)
LM
T
D
/dt)
/dt)
cr
cr
A
B
C 0,0342
D 0,0161
A
B
C 0,2021
D 0,000614
max.
max.
max.
max.
max.
max.
max.
max.
0,616
0,000219
-0,0864
0,000343
min.
typ.
typ.
typ.
60000
58000
18000
16820
Seite / page: 2 / 10
7500
8000
2770 A
1770
2190
2560
2000 V/µs
7500 V
1,20
1,24
0,44
300 A/µs
100 mA
600 mA
2,8
3,0
0,4
40 mW
1 A
5 µs
V
V
A
A
A
A
A
10³ A²s
10³ A²s
V
V
V
V
mΩ
mΩ
2/9