T4301N Infineon Technologies, T4301N Datasheet - Page 2

• Manufacturer Part Number: T4301N
• Manufacturer: Infineon Technologies

Specifications of T4301N

• Vdrm/ Vrrm (v): 2,200.0 - 2,900.0 V
• Itsm: 91,000.0 A
• Itavm: 4030 (180 ° el sin)
• Housing: Disc dia 150mm height 35mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

Date of Publication: 2011-05-02
Phase Control Thyristor
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Kritische Stromsteilheit
critical rate of rise of on-state current
Elektrische Eigenschaften / electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltage
Grenzlastintegral
I²t-value
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Charakteristische Werte / characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
on-state characteristic
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
approved by: JP
prepared by: TM
Netz-Thyristor
v
T

A

B

i
T

C

400A  i
Ln
i (
T
Elektrische Eigenschaften
F

date of publication:
 5000A
) 1

D
Technische Information /

revision:
technical information
i
T
T4301N
2011-05-02
Revision: 9.0
T
T
T
T
T
T
T
T
T
DIN IEC 60747-6
f = 50 Hz, i
T
5.Kennbuchstabe / 5
T
T
T
T
T
T
T
T
T
T
T
v
DIN IEC 60747-6
T
T
i
GM
D
vj
C
C
C
C
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
= V
= 25 °C,i
= -40°C... T
= 85 °C
= 85 °C
= 70 °C
= 55 °C
= 25 °C, t
= T
= 25 °C, t
= T
= T
= T
= T
= T
= T
= 25°C, v
= 25°C, v
= T
= T
= T
= 25°C, v
= T
9.0
= 25°C, v
= 3 A, di
DRM
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
, v
, t
, t
, v
GM
, i
, v
, v
, v
GM
R
P
P
D
D
D
G
P
P
D
T
D
D
D
D
/dt = 6 A/µs, t
= V
= 10 ms
= 10 ms
= 3 A, di
= 12 V
= 12 V
= 12 V
= 10 ms
= 10 ms
= 0,67 V
= 4000A
= 3 A, di
vj max
= 12 V, R
= 12 V
= 0,5 V
= 0,5 V
RRM
th
G
letter H
DRM
DRM
G
DRM
/dt = 6 A/µs
/dt = 6 A/µs
GK
≥ 10 Ω
g
= 20 µs
V
I
I
I
I²t
(di
(dv
v
V
r
typ.
max.
I
V
I
V
I
I
i
t
TRMSM
TAVM
TSM
GT
GD
H
L
D
gd
T
T
DRM
(TO)
GT
GD
, i
T
D
/dt)
R
/dt)
,V
cr
RRM
cr
A
B
C -0,0094
D 0,00776
A
B
C -0,00622
D 0,00808
Max.
max.
Max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
0,6001
0,000034
0,6009
0,000034
typ.
typ.
typ.
100000
91000
50000
41400
0,738
0,772
0,103
0,107
2200
2600
2800
2900
6330 A
4030
4920
5700
1000 V/µs
1,15
Seite/page: 2/11
300 A/µs
350 mA
350 mA
600 mA
1,2
2,5 V
0,4 V
20
10
3 A
2 µs
V
V
V
V
A
A
A
A
A
10³ A²s
10³ A²s
V
V
V
V
mΩ
mΩ
mA
mA