T1220N Infineon Technologies, T1220N Datasheet

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T1220N

Manufacturer Part Number
T1220N
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of T1220N

Vdrm/ Vrrm (v)
2,000.0 - 2,800.0 V
Itsm
22,500.0 A
Itavm
1220 (180 ° el sin)
Housing
Disc dia 75mm height 26mm / Ceramic
Configuration
Phase Control Thyristors / SCR
IFBIP D AEC, 2008-09-19, H.Sandmann
N
Phase Control Thyristor
Vorwärts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stossstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
Zündverzug
gate controlled delay time
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie
on-state characteristic
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
approved by: M.Leifeld
prepared by: H.Sandmann
v
Netz-Thyristor
enndaten
T
A
B
i
T
300 A ≤ i
C
ln
i (
T
≤ 6100 A
T
Datenblatt / Data sheet
Elektrische Eigenschaften
1)
D
i
T
T1220N
T
T
T
T
T
T
T
T
T
DIN IEC 60747-6
f = 50 Hz, i
T
5.Kennbuchstabe / 5
T
T
T
T
T
T
T
T
T
T
T
T
v
DIN IEC 60747-6
T
T
i
GM
D
vj
vj
vj
C
C
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
vj
A 54/08
date of publication:
vj
= V
= 25 °C, i
= -40°C... T
= -40°C... T
= +25°C... T
= 85 °C
= 55 °C, θ = 180°sin, t
= 25 °C °C, t
= T
= 25 °C, t
= T
= T
= T
= T
= T
= T
= T
= 25 °C, v
= 25 °C, v
= T
= T
= T
= 25°C, v
= T
= 25°C, v
= 1 A, di
DRM
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
vj max
, v
, t
, t
, v
, i
, i
, v
, v
, v
GM
R
revision:
GM
P
P
D
G
P
D
T
T
D
D
D
D
D
D
/dt = 1 A/µs, t
= V
= 1 A, di
= 10 ms
= 10 ms
= 10 ms
= 12V
= 3,5 kA
= 1,0 kA
= 0,67 V
= 12V
= 0,5 V
= 0,5 V
vj max
vj max
= 12V
= 12V
= 12V, R
= 1 A, di
vj max
P
RRM
= 10 ms
th
DRM
DRM
G
letter F
DRM
/dt = 1 A/µs
GK
G
2008-09-19
/dt = 1 A/µs
P
≥ 10 Ω
= 10 ms
g
1.0
= 20 µs
V
V
V
I
I
I
I
I
I²t
(di
(dv
v
V
r
I
V
I
V
I
I
i
t
D
TRMSM
TAVM
TAVM
TRMS
TSM
GT
GD
H
L
gd
T
T
DRM
DSM
RSM
(TO)
GT
GD
, i
T
D
R
/dt)
/dt)
,V
cr
RRM
cr
C=
D=
A=
B=
2000
2200
2000
2200
2100
2300
Seite/page
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
max.
-9,652E-03
9,687E-01
2,165E-04
8,131E-03
25000
22500
0,275 mΩ
2400
2600
2800
2400
2600
2800
2500
2700
2900
2625 A
1220 A
1740 A
2740 A
3125
2531
1000 V/µs
2500 mA
2,13
1,38
0,25 V
150 A/µs
250 mA
500 mA
200 mA
1,0 V
4,5 µs
10
2 V
5
V
V
V
V
V
V
V
V
V
A
A
10³ A²s
10³ A²s
V
V
mA
mA
1/10

Related parts for T1220N

T1220N Summary of contents

Page 1

... Haltestrom holding current Einraststrom latching current Vorwärts- und Rückwärts-Sperrstrom forward off-state and reverse current Zündverzug gate controlled delay time prepared by: H.Sandmann approved by: M.Leifeld IFBIP D AEC, 2008-09-19, H.Sandmann T1220N T = -40°C... max Elektrische Eigenschaften T = -40°C... max T = +25°C... T ...

Page 2

... Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft clamping force Steueranschlüsse control terminals Gewicht weight Kriechstrecke creepage distance Schwingfestigkeit vibration resistance IFBIP D AEC, 2008-09-19, H.Sandmann T1220N Thermische Eigenschaften vj vj max 100 / V/µs, - ...

Page 3

... N Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor Massbild 1 IFBIP D AEC, 2008-09-19, H.Sandmann T1220N 1: Anode / Anode Kathode / Cathode 2 4: Gate 5: Hilfskathode/ A 54/08 Auxiliary Cathode Seite/page 3/10 ...

Page 4

... R [°C/W] thn kathodenseitig cathode-sided [s] n Analytische Funktion / Analytical function: 0,04 0,03 0,02 0,01 0,00 0,001 0,01 Transienter innerer Wärmewiderstand fü Transient thermal impedance for DC IFBIP D AEC, 2008-09-19, H.Sandmann T1220N 0,00022 0,00110 0,00102 0,00136 0,00306 0,01390 0,00065 0,0019 0,00239 0,00160 0,0091 0,07910 0,00055 0,00206 0,00604 0,00140 ...

Page 5

... Grenzdurchlasskennlinie / Limiting on-state characteristic i IFBIP D AEC, 2008-09-19, H.Sandmann T1220N Durchlasskennlinie ∆Z / ∆Z th Θ rec th Θ sin Θ = 180° Θ = 120° Θ = 90° 0,00188 0,00316 0,00413 0,00135 0,00198 0,00282 ...

Page 6

... Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature T Parameter: Stromflusswinkel Θ / Current conduction angle Θ IFBIP D AEC, 2008-09-19, H.Sandmann T1220N Durchlassverluste 60° 180° θ = 30° 600 800 1000 I [A] TAV Sinusförmiger Strom / Sinusoidal current θ ...

Page 7

... Höchstzulässige Gehäusetemperatur / Maximum allowable case temperature T Parameter: Stromflusswinkel Θ / Current conduction angle Θ IFBIP D AEC, 2008-09-19, H.Sandmann T1220N Tc 180° 120° 90° 60° θ = 30° 1000 1500 I [ Rechteckförmiger Strom / Rectangular current θ ...

Page 8

... Phase Control Thyristor 10 1 0,1 10 Steuercharakteristik v Gate characteristic v Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P 10000 1000 1 Sperrverzögerungsladung / Recovered charge Q IFBIP D AEC, 2008-09-19, H.Sandmann T1220N Steuerkennlinie i [mA] 100 mit Zündbereichen fü with triggering area for Zü ...

Page 9

... Typische Abhängigkeit des Grenzstromes I Halbwellen bei 50Hz. Parameter: Rückwärtsspannung V Typical dependency of maximum overload on-state current I sinusoidal half waves at 50Hz. Parameter: peak reverse voltage V IFBIP D AEC, 2008-09-19, H.Sandmann T1220N Anzahl Pulse bei 50Hz Sinus Halbwellen Number of pulses for 50Hz sinusoidal half waves von der Anzahl fü ...

Page 10

... If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. IFBIP D AEC, 2008-09-19, H.Sandmann T1220N A 54/08 Seite/page 10/10 ...

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