T570N Infineon Technologies, T570N Datasheet - Page 8

• Manufacturer Part Number: T570N
• Manufacturer: Infineon Technologies

Specifications of T570N

• Vdrm/ Vrrm (v): 2,200.0 - 2,600.0 V
• Itsm: 9,000.0 A
• Itavm: 561 (180 ° el sin)
• Housing: Disc dia 58mm height 14mm / Ceramic
• Configuration: Phase Control Thyristors / SCR

IFBIP D AEC / 2010-01-15, H.Sandmann
N
Phase Control Thyristor
100
10000
0,1
10
1000
1
100
10
Netz-Thyristor
1
Höchstzulässige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation P
a - 40W / 10ms
Steuercharakteristik v
Gate characteristic v
Sperrverzögerungsladung / Recovered charge Q
100
Datenblatt / Data sheet
Parameter: Durchlassstrom / On-state current i
T
vj
b - 80W / 1ms
= T
Steuerkennlinie
vjmax
Zündverzug
G
, v
G
= f (i
= f (i
R
T570N
≤ 0,5 V
G
A06/10
G
) with triggering area for V
) mit Zündbereichen für V
1000
c - 100W / 0,5ms
RRM
10
, V
RM
= 0,8 V
i
G
[mA]
RRM
d – 150W / 0,1ms
r
= f(di/dt)
TM
D
D
a
10000
= 12 V
= 12 V
-di/dt [A/µs]
b
c
d
Seite/page
GM
= f (t
g
) :
100000
i
1000A
100
TM
500A
200A
100A
8/10
20A
50A
=