CM1200HC-90R Powerex Inc, CM1200HC-90R Datasheet - Page 4

• Manufacturer Part Number: CM1200HC-90R
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM1200HC-90R

• Prx Availability: RequestQuote
• Voltage: 4500V
• Current: 1200A
• Circuit Configuration: Single
• Rohs Compliant: No

4
MECHANICAL CHARACTERISTICS
M
M
M
m
CTI
d
d
L
R
r
Note 1.
Note 2.
Note 3.
Note 4.
Note 5.
Note 6.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES
g
th
a
s
P CE
CC’+EE’
t
s
t
Symbol
-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Pulse width and repetition rate should be such that junction temperature (T
The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
Junction temperature (T
Pulse width and repetition rate should be such as to cause negligible temperature rise.
E
The integration range of E
on(10%)
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistor
/ E
off(10%)
/ E
rec(10%)
Item
j
) should not exceed T
are the integral of 0.1V
on
/ E
off
/ E
rec
according to IEC 60747.
jmax
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
T
T
c
c
CE
= 25°C
= 25°C
rating (150°C).
x 0.1I
C
x dt.
Conditions
j
) does not exceed T
CM1200HC-90R
19.5
32.0
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
Min
600
7.0
3.0
1.0
—
—
—
—
opmax
Limits
11.0
0.12
Typ
1.2
1.7
—
—
—
—
—
—
rating (150°C).
HVM-1057-A
INSULATED TYPE
22.0
Max
6.0
3.0
—
—
—
—
—
—
—
4 of 8
Unit
N·m
N·m
N·m
mm
mm
mΩ
nH
kg
—
Ω