CM1200HC-90R Powerex Inc, CM1200HC-90R Datasheet
CM1200HC-90R
Specifications of CM1200HC-90R
Related parts for CM1200HC-90R
CM1200HC-90R Summary of contents
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... APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES MITSUBISHI HVIGBT MODULES CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE ● I ……………………… ...
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... R = 2.7 Ω 25°C G(on) j (Note 150 125° Inductive load T = 25°C j (Note 125°C j MITSUBISHI HVIGBT MODULES CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 4500 V 4400 ± 1200 A 2400 A 1200 A 2400 A 13100 W 6000 V 3500 V − ...
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... T = 125°C j Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ = 1W/m· 100 µm grease (c-f) MITSUBISHI HVIGBT MODULES CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max — 6.25 — µs — 6.60 8.00 — ...
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... M4: Auxiliary terminals screw T = 25° 25° does not exceed T j rating (150°C). jmax x 0. according to IEC 60747. rec MITSUBISHI HVIGBT MODULES CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE Limits Unit Min Typ Max 7.0 — 22.0 N·m 3.0 — 6.0 N·m 1.0 — ...
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... FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 2500 2000 1500 Tj = 125°C 1000 500 MITSUBISHI HVIGBT MODULES CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 125° 25° Gate - Emitter Voltage [ 25° 125° ...
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... Coes -5 Cres -10 -15 10 100 HALF-BRIDGE SWITCHING ENERGY 12 Eon 10 8 Eoff 6 4 Erec 2 0 2000 2500 0 MITSUBISHI HVIGBT MODULES CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE (TYPICAL 2800V 1200A 25° Gate Charge [µC] CHARACTERISTICS (TYPICAL 2800V 1200A ± ...
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... REVERSE BIAS SAFE OPERATING AREA 10000 3000 2500 Irr 1000 2000 1500 100 1000 trr 500 10 0 10000 0 MITSUBISHI HVIGBT MODULES CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE = 2800V ±15V 2.7Ω 22Ω G(on) G(off) = 150nH 125°C td(off) td(on 1000 ...
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... − [K/kW τ [sec MITSUBISHI HVIGBT MODULES CM1200HC-90R HIGH POWER SWITCHING USE INSULATED TYPE V ≤ 3200V, di/dt < 6kA/µ 125°C 1000 2000 3000 4000 Emitter-Collector Voltage [V] ⎧ ⎫ ⎛ ⎞ t ⎜ ⎟ n ⎪ ⎪ ...