CM900HB-90H Powerex Inc, CM900HB-90H Datasheet - Page 3

• Manufacturer Part Number: CM900HB-90H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM900HB-90H

• Prx Availability: RequestQuote
• Voltage: 4500V
• Current: 900A
• Circuit Configuration: Single
• Rohs Compliant: No

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
1800
1500
1200
900
600
300
0
COLLECTOR-EMITTER VOLTAGE V
8
6
4
2
0
8
6
4
2
0
0
0
0
COLLECTOR-EMITTER SATURATION
V
V
V
T
V
GE
GE
GE
FORWARD CHARACTERISTICS
j
VOLTAGE CHARACTERISTICS
GE
OUTPUT CHARACTERISTICS
= 25 C
COLLECTOR CURRENT I
300
300
=20V
=15V
=14V
EMITTER CURRENT I
= 15V
2
FREE-WHEEL DIODE
600
600
( TYPICAL )
( TYPICAL )
( TYPICAL )
4
V
900
900
GE
=12V
6
1200
1200
T
T
T
T
V
V
E
j
j
j
j
= 25 C
= 125 C
GE
GE
= 25 C
= 125 C
C
( A )
1500
1500
8
=10V
=8V
( A )
CE
1800
1800
10
( V )
12000
10000
8000
6000
4000
2000
10
10
10
10
10
10
0
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
COLLECTOR-EMITTER SATURATION
–1
CAPACITANCE CHARACTERISTICS
V
C
C
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
V
T
TRANSFER CHARACTERISTICS
GE
ies,
res
2 3
CE
VOLTAGE CHARACTERISTICS
j
= 25 C
= 15V, T
C
= 10V
4
4
oes
5 7 10
: f = 100kHz
: f = 1MHz
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
( TYPICAL )
( TYPICAL )
( TYPICAL )
j
0
8
8
= 25 C
2 3 5 7 10
12
12
Ic=450A
CM900HB-90H
Ic=1800A
Ic=900A
1
T
T
j
j
2 3 5 7 10
= 25 C
= 125 C
16
16
GE
GE
INSULATED TYPE
C
C
C
( V )
( V )
CE
ies
oes
res
20
20
( V )
2
Mar. 2003