CM900HB-90H Powerex Inc, CM900HB-90H Datasheet
CM900HB-90H
Specifications of CM900HB-90H
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CM900HB-90H Summary of contents
Page 1
... OUTLINE DRAWING & CIRCUIT DIAGRAM 190 171 57 57 0.25 0. 20.25 41. NUTS 79.4 61.5 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... Insulated Type 1-element in a pack NUTS 57 0. 7MOUNTING HOLES 61 ...
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... 900A, E die / dt = –1800A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied ) does not exceed T j MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 4500 20 900 (Note 1) 1800 900 (Note 1) 1800 11100 – ...
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... ies 125 res 0 10 1500 1800 – COLLECTOR-EMITTER VOLTAGE V E MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE INSULATED TYPE ( TYPICAL ) = 10V 125 TYPICAL ) = 25 C Ic=1800A Ic=900A Ic=450A ...
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... Single Pulse – –2 10 – MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE INSULATED TYPE OF FREE-WHEEL DIODE ( TYPICAL ) 2250V 125 15V ...