CM1200HC-66H Powerex Inc, CM1200HC-66H Datasheet - Page 5

• Manufacturer Part Number: CM1200HC-66H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM1200HC-66H

• Prx Availability: RequestQuote
• Voltage: 3300V
• Current: 1200A
• Circuit Configuration: Single
• Rohs Compliant: No

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
10
10
2.5
1.5
0.5
10
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
0
-1
SWITCHING ENERGY CHARACTERISTICS
V
R
T
V
f = 100kHz
j
GE
CC
G(on)
= 125 C, Inductive load
2 3
COLLECTOR-EMITTER VOLTAGE ( V )
CAPACITANCE CHARACTERISTICS
400
= 0V, T
= 1650V, V
= R
COLLECTOR CURRENT ( A )
5 7
G(off)
j
800
10
= 25 C
HALF-BRIDGE
0
= 1.6
GE
( TYPICAL )
( TYPICAL )
2 3
= 15V
1200
5 7
1600
10
1
2 3
2000
C
C
C
oes
res
ies
E
E
E
5 7
on
off
rec
2400
10
2
20
16
12
8
4
0
6
5
4
3
2
1
0
0
0
SWITCHING ENERGY CHARACTERISTICS
V
T
V
V
T
CC
j
j
CC
GE
= 25 C
= 125 C, Inductive load
GATE CHARGE CHARACTERISTICS
= 1650V, I
= 1650V, I
= 15V
3
5
GATE RESISTANCE ( )
GATE CHARGE ( C )
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
HALF-BRIDGE
C
C
= 1200A
= 1200A
( TYPICAL )
( TYPICAL )
10
6
CM1200HC-66H
INSULATED TYPE
15
9
E
E
E
on
off
rec
12
20
Jul. 2005