CM800HB-66H Powerex Inc, CM800HB-66H Datasheet - Page 4

• Manufacturer Part Number: CM800HB-66H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800HB-66H

• Prx Availability: RequestQuote
• Voltage: 3300V
• Current: 800A
• Circuit Configuration: Single
• Rohs Compliant: No

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
10
10
3.0
2.5
2.0
1.5
1.0
0.5
20
16
12
–1
5
3
2
7
5
3
2
7
5
SWITCHING ENERGY CHARACTERISTICS
0
8
4
0
0
SWITCHING TIME CHARACTERISTICS
5
0
0
GATE CHARGE CHARACTERISTICS
V
R
Inductive load
V
I
7 10
CC
C
G
CC
COLLECTOR CURRENT I
= 800A
= 2.5 , Tj = 125 C,
2000
= 1650V, V
2
= 1650V
GATE CHARGE Q
400
2 3
HALF-BRIDGE
CURRENT ( A )
V
R
Inductive load
HALF-BRIDGE
4000
CC
( TYPICAL )
G
( TYPICAL )
( TYPICAL )
= 2.5 , T
GE
= 1650V, V
800
5 7 10
= 15V,
6000
t
t
t
t
d(off)
d(on)
r
f
j
G
3
= 125 C
1200
( nC )
GE
8000 10000
E
E
E
C
2 3
on
off
rec
= 15V
( A )
1600
5
10
10
10
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
SWITCHING ENERGY CHARACTERISTICS
–1
–2
5
3
2
7
5
3
2
7
5
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
1
0
1
0
10
5
0
–3
V
Inductive load
V
V
V
Inductive load
Single Pulse
T
R
R
7 10
CC
GE
IMPEDANCE CHARACTERISTICS
C
CC
GE
th(j – c)Q
th(j – c)R
2 3 5 7
= 25 C
= 1650V, T
= 15V, R
= 1650V, I
= 15V, Tj = 125 C,
EMITTER CURRENT I
OF FREE-WHEEL DIODE
2
GATE RESISTANCE ( )
TRANSIENT THERMAL
= 0.024K/W
= 0.012K/W
2 3
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
10
10
HALF-BRIDGE
( TYPICAL )
( TYPICAL )
–2
TIME ( s )
G
C
2 3 5 7
j
= 125 C
= 2.5
= 800A,
5 7 10
CM800HB-66H
I
t
rr
rr
20
10
3
–1
E
2 3 5 7
INSULATED TYPE
( A )
2 3
E
E
on
off
30
10
5
5
3
2
10
7
5
3
2
10
7
5
0
3
2
Mar. 2003