CM800HB-66H Powerex Inc, CM800HB-66H Datasheet - Page 3

• Manufacturer Part Number: CM800HB-66H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800HB-66H

• Prx Availability: RequestQuote
• Voltage: 3300V
• Current: 800A
• Circuit Configuration: Single
• Rohs Compliant: No

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
1600
1200
800
400
0
COLLECTOR-EMITTER VOLTAGE V
8
6
4
2
0
8
6
4
2
0
0
0
0
COLLECTOR-EMITTER SATURATION
V
T
GE
V
FORWARD CHARACTERISTICS
V
V
VOLTAGE CHARACTERISTICS
j
=25 C
COLLECTOR CURRENT I
OUTPUT CHARACTERISTICS
GE
GE
GE
=15V
EMITTER CURRENT I
=20V
=15V
2
=14V
400
400
FREE-WHEEL DIODE
( TYPICAL )
( TYPICAL )
( TYPICAL )
4
800
800
V
GE
V
V
6
=11V V
GE
GE
=13V
=12V
1200
1200
T
T
T
T
E
j
j
j
j
V
V
V
= 25 C
= 125 C
= 25 C
= 125 C
C
( A )
GE
8
GE
GE
GE
( A )
=10V
=9V
=8V
=7V
CE
1600
1600
10
( V )
1600
1200
800
400
10
10
10
10
10
10
0
8
6
4
2
0
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
3
2
1
0
0
0
COLLECTOR-EMITTER SATURATION
–1
CAPACITANCE CHARACTERISTICS
V
GATE-EMITTER VOLTAGE V
GATE-EMITTER VOLTAGE V
T
TRANSFER CHARACTERISTICS
CE
VOLTAGE CHARACTERISTICS
j
2 3
= 25 C
=10V
4
4
5 7 10
MITSUBISHI HVIGBT MODULES
HIGH POWER SWITCHING USE
( TYPICAL )
( TYPICAL )
( TYPICAL )
0
8
8
V
C
C
2 3 5 7 10
GE
ies,
res
CM800HB-66H
= 0V, T
C
12
12
oes
I
C
: f = 100kHz
: f = 1MHz
INSULATED TYPE
I
T
T
1
C
= 1600A
j
j
j
I
= 25 C
= 800A
C
2 3 5 7 10
= 25 C
= 125 C
16
16
= 320A
GE
GE
C
C
C
( V )
( V )
CE
ies
oes
res
20
20
( V )
Mar. 2003
2