CM800E2C-66H Powerex Inc, CM800E2C-66H Datasheet - Page 2

• Manufacturer Part Number: CM800E2C-66H
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM800E2C-66H

• Prx Availability: RequestQuote
• Voltage: 3300V
• Current: 800A
• Circuit Configuration: Chopper, Buck, Boost
• Rohs Compliant: No

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Note 1. Pulse width and repetition rate should be such that the device junction temp. (T
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
V
V
I
I
I
I
P
T
T
V
I
V
I
V
C
C
C
Q
t
t
t
t
V
t
Q
R
R
R
V
t
Q
R
R
C
CM
E (Note 2)
EM (Note 2)
CES
GES
d (on)
r
d (off)
f
rr
rr
Symbol
Symbol
stg
j
CES
GES
C (Note 3)
iso
GE(th)
CE(sat)
ies
oes
res
EC (Note 2)
th(j-c)Q
th(j-c)R
th(c-f)
FM
th(j-c)
th(c-f)
G
rr (Note 2)
rr
—
—
2. I
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Note 2)
E
, V
EC
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
Maximum collector dissipation
Junction temperature
Storage temperature
Isolation voltage
Mounting torque
Mass
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
, t
rr
, Q
rr
& die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
(Tj = 25 C)
Item
Item
j
) should not increase beyond 150 C.
(Tj = 25 C)
V
V
DC, T
Pulse
Pulse
T
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
V
I
V
T
T
V
V
V
V
V
R
Resistive load switching operation
I
I
die / dt = –1600A / s
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied (Per 2/3 module)
I
I
di
Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/3 module)
C
E
E
F
F
C
j
j
GE
CE
CE
GE
CE
GE
CC
CC
GE1
G
f
= 25 C
= 125 C
= 800A, V
= 800A
= 800A, Clamp diode part
= 800A
= 80mA, V
/ dt = –1600A / s, Clamp diode part
= 25 C, IGBT part
= 2.5
= 0V
= V
= 0V
= V
= 10V
= 0V
= 1650V, I
= 1650V, I
C
= V
= 95 C
CES
GES
GE2
, V
, V
GE
CE
= 15V
GE
CE
C
C
= 0V
= 10V
I
= 800A, V
= 800A
C
= 0V
= 0V
= 800A, V
Conditions
Conditions
—
—
GE
GE
= 15V
= 15V
j
) does not exceed T
(Note 1)
(Note 1)
(Note 4)
MITSUBISHI HVIGBT MODULES
jmax
HIGH POWER SWITCHING USE
rating.
Min
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
CM800E2C-66H
6.67 ~ 13.00
–40 ~ +150
–40 ~ +125
2.84 ~ 6.00
0.88 ~ 2.00
Ratings
Limits
0.008
0.008
3300
1600
1600
9600
6000
800
800
Typ
1.5
3.80
4.00
12.0
2.80
3.00
—
—
—
—
—
—
—
—
—
—
—
120
270
270
20
INSULATED TYPE
6.0
3.6
5.7
0.013
0.025
0.025
Max
4.94
1.60
2.00
2.50
1.00
3.64
1.40
3.90
1.40
—
—
—
—
—
—
—
—
—
7.5
0.5
10
Mar. 2003
K/W
K/W
K/W
K/W
K/W
Unit
N·m
N·m
N·m
Unit
mA
nF
nF
nF
W
kg
V
V
V
V
A
A
A
A
V
V
V
C
C
A
C
C
C
s
s
s
s
s
s