CM800E2C-66H Powerex Inc, CM800E2C-66H Datasheet
CM800E2C-66H
Specifications of CM800E2C-66H
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CM800E2C-66H Summary of contents
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... 20.25 41. NUTS 79.4 61.5 13 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE I C ................................................................... V CES ....................................................... Insulated Type 1-elements in a pack (for brake) AISiC base plate NUTS 57 0. 7MOUNTING HOLES 61 ...
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... 800A –1600A / s, Clamp diode part f Junction to case, Clamp diode part Case to fin, conductive grease applied (Per 1/3 module) ) does not exceed T j MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE INSULATED TYPE Ratings Unit 3300 20 800 (Note 1) 1600 800 1600 ...
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... 125 1200 1600 – COLLECTOR-EMITTER VOLTAGE V E MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE INSULATED TYPE ( TYPICAL ) =10V 125 TYPICAL ) = 1600A 800A ...
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... G MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE INSULATED TYPE OF FREE-WHEEL DIODE ( TYPICAL ) 1650V 125 Inductive load V = 15V 2 ...