CM150DX-24S Powerex Inc, CM150DX-24S Datasheet - Page 3

• Manufacturer Part Number: CM150DX-24S
• Manufacturer: Powerex Inc
• Type: IGBT Moduler

Specifications of CM150DX-24S

• Prx Availability: RequestQuote
• Voltage: 1200V
• Current: 150A
• Circuit Configuration: Dual
• Rohs Compliant: Yes
• Recommended Gate Driver: VLA504-01
• Recommended Dc To Dc Converter: VLA106-15242
• Interface Circuit Ref Design: VLA536-01R

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com
CM150DX-24S
Dual IGBTMOD™ NX-S Series Module
150 Amperes/1200 Volts
12/11 Rev. 3
Electrical Characteristics, T
Inverter Part IGBT/FWDi
Characteristics
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Internal Lead Resistance
Internal Gate Resistance
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
*2 Case temperature (T
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
diode (FWDi).
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
C
) and heatsink temperature (T
j
= 25°C unless otherwise specified
s
) is measured on the surface
R
(Terminal)
(Terminal)
V
V
V
CC' + EE'
Symbol
(Chip)
(Chip)
V
V
CE(sat)
CE(sat)
t
t
I
I
C
Q
GE(th)
C
C
E
d(on)
d(off)
CES
GES
t
E
E
Q
EC
EC
rr
r
oes
rr
res
t
t
rr
ies
on
off
g
r
G
f
*1
*1
*1
*1
*1
V
V
V
CC
I
I
CC
CC
E
E
I
I
I
I
C
C
C
C
I
I
I
I
I
E
= 150A, V
I
E
= 150A, V
V
C
C
E
E
= 600V, I
T
= 600V, I
= 150A, V
= 150A, V
= 150A, V
= 150A, V
CC
= 600V, I
R
R
= 150A, V
= 150A, V
= 150A, V
= 150A, V
j
= 150A, V
= 150A, V
Per Switch,T
V
= 150°C, Inductive Load
V
G
G
Main Terminals-Chip,
GE
V
V
I
CE
= 600V, I
C
= 0Ω, Inductive Load
= 0Ω, Inductive Load
CE
GE
= 15mA, V
= ±15V, R
= 10V, V
Test Conditions
Per Switch
= V
= V
C
GE
GE
E
C
GE
GE
GE
GE
GE
GE
= 150A, V
GE
GE
= 150A, V
GE
GE
= 150A, V
CES
GES
= 0V, T
= 0V, T
C
= 15V, T
= 15V, T
= 15V, T
= 15V, T
29.1
38.1
C
= 0V, T
= 0V, T
= 15V, T
= 15V, T
= 0V, T
= 0V, T
= I
GE
0
, V
, V
= 25°C
G
CE
E
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
GE
CE
= 0V
j
j
= 0Ω,
= 150A,
= 150°C
= 150°C
GE
= 10V
GE
GE
j
j
j
j
j
j
j
j
= 0V
= 0V
= 125°C
= 125°C
j
j
= 125°C
= 150°C
= 125°C
= 150°C
= 25°C
= 25°C
*2
= 25°C
= 25°C
= ±15V,
= ±15V
= 15V
47
48
*5
*5
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
*5
*5
1
*5
*5
*5
*5
*5
*5
*5
*5
Di2
2
3
4 5
Th
Tr2
6
7
Min.
8
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
9 10 11 12 13 14 15 16 17 18 19 20 21 22
Di1
Tr1
2.00
2.05
24.2
16.0
12.2
1.80
1.70
1.90
1.95
350
1.80
1.80
1.80
1.70
1.70
1.70
Typ.
8.0
13
—
—
—
—
—
—
—
—
—
—
—
6
24
23
LABEL SIDE
Max.
2.25
2.15
0.25
2.25
2.15
800
200
600
300
300
0.5
6.6
3.0
1.8
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
0
29.0
40.8
Units
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
Volts
mA
mΩ
nC
µC
mJ
mJ
mJ
µA
nF
nF
nF
ns
ns
ns
ns
ns
Ω
3