VUM33-06PH IXYS, VUM33-06PH Datasheet - Page 6

• Manufacturer Part Number: VUM33-06PH
• Description: 1 Ph. PFC Modules (1 Ph. Bridge + MOSFET Boost)
• Manufacturer: IXYS

Specifications of VUM33-06PH

• Vdss, Max, (v): 600
• Id25, Tc = 25°c, (a): 47
• Rds(on), Max, Tj = 25°c, (mohm): 0.12
• Vrrm, Boost Diodes, (v): 600
• Vrrm, Rectifier Diodes, (v): 800
• Package Style: V1-B-Pack

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
V
[mJ]
[mJ]
E
E
[V]
E
GS
on
on
rec
,
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
12
10
8
6
4
2
0
0
0
4
Fig. 7 Gate charge characteristics
Fig. 9 Typ. turn-on energy and switching times
Fig. 11 Typ. turn-on energy and switching times
E rec boost
I
V
D
I
V
V
T
D
DS
DS
GS
VJ
E rec boost
E on
R
V
V
T
= 60 A
= 380 V
= 20 A
= 380 V
= 0/10 V
VJ
= 125°C
DS
GS
G
E on
5
= 4.7 Ω
= 380 V
= 0/10 V
= 125°C
versus drain current, inductive switching
10
versus gate resistor, inductive switching
50
6
20
7
Q
R
I
D
G
G
100
[A]
[Ω]
[nC]
8
30
9
150
40
t d(on)
t r
10
t r
t d(on)
200
50
11
80
70
60
50
40
30
20
10
0
100
80
60
40
20
0
[ns]
[ns]
t
t
[mJ]
[mJ]
E
E
[A]
off
I
off
D
0.6
0.4
0.2
0.0
1.0
0.8
0.6
0.4
0.2
0.0
70
60
50
40
30
20
10
0
-40 -20
4
0
Fig. 8 Drain current I
Fig. 10 Typ. turn-off energy and switching times
Fig. 12 Typ. turn-off energy and switching times
I
V
V
T
D
E off
DS
GS
VJ
R
V
V
T
= 20 A
= 380 V
= 0/10 V
= 125°C
VJ
DS
GS
G
= 4.7 Ω
= 380 V
= 0/10 V
= 125°C
10
versus drain current, inductive switching
versus gate resistor, inductive switching
0
E off
6
20
40
20
R
T
C
I
G
D
60
D
[°C]
[Ω]
[A]
versus case temperature T
8
80 100 120 140 160
30
VUM 33-06PH
40
t f
t d(off)
10
t d(off)
t f
50
200
160
120
80
40
0
300
250
200
150
100
50
0
20100921b
[ns]
[ns]
6 - 8
C
t
t