VUM33-06PH IXYS, VUM33-06PH Datasheet

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VUM33-06PH

Manufacturer Part Number
VUM33-06PH
Description
1 Ph. PFC Modules (1 Ph. Bridge + MOSFET Boost)
Manufacturer
IXYS
Datasheet

Specifications of VUM33-06PH

Vdss, Max, (v)
600
Id25, Tc = 25°c, (a)
47
Rds(on), Max, Tj = 25°c, (mohm)
0.12
Vrrm, Boost Diodes, (v)
600
Vrrm, Rectifier Diodes, (v)
800
Package Style
V1-B-Pack
Power MOSFET Stage
for Boost Converters
Module for Power Factor Correction
Part name
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
VUM33-06PH
Features:
• Package with DCB ceramic base plate
• Soldering connections for PCB
• Isolation voltage 3600 V~
• Low R
• Low package inductance for high
• SONIC™ boost diode
mounting
speed switching
- fast and soft reverse recovery
- low operating forward voltage
DS(on)
Polar™ MOSFET
(Marking on product)
Advantages:
• 3 functions in one package
• Output power up to 8 kW
• No external isolation
• Easy to mount with two screws
• Suitable for wave soldering
• High temperature and power
• Fits easily to all available PFC
cycling capability
controller ICs
1
3
D2
D1
2
5
D3
D4
V
I
I
Single Phase
DAV
FSM
4
8
RRM
Rectifier
= 1600 V V
= 106 A I
= 300 A V
T
6
7
D
DT
F25
Package:
• "V1-Pack" standard outline
Application:
• Power factor pre-conditioner for
• Boost topology for SMPS including
• Power supply for welding equipment
RRM
F (30A)
Boost Diode
Insulated copper base plate
SMPS, UPS, battery chargers and
inverters
1~ rectifier bridge
= 600 V V
=
= 2.24 V R
1
60 A I
VUM 33-06PH
2
5
3
D25
6
DSS
DS(on)
MOSFET
4
7
= 600
= 50
= 120 mΩ
8
20100921b
1 - 8
V
A

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VUM33-06PH Summary of contents

Page 1

... Power MOSFET Stage for Boost Converters Module for Power Factor Correction Part name (Marking on product) VUM33-06PH Features: • Package with DCB ceramic base plate • Soldering connections for PCB mounting • Isolation voltage 3600 V~ • Low R Polar™ MOSFET DS(on) • Low package inductance for high speed switching • ...

Page 2

... E turn-off energy per pulse off R thermal resistance junction to case thJC R thermal resistance case to heatsink thJH IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Conditions T continuous transient ...

Page 3

... VJ T max. virtual junction temperature VJM T storage temperature stg V isolation voltage ISOL M mounting torque (M5) d Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Conditions RRM V = 380 /dt = -790 A/µ ...

Page 4

... Outline Drawing Product Ordering Ordering Part Name Standard VUM 33-06PH IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved Logo XXX XX-XXXXX Part name Date Code Marking on Product Delivering Mode Base Qty Ordering Code ...

Page 5

... T [°C] VJ Fig. 5 Drain source on-state resistance R versus junction temperature DSon IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved [A] 80 100 120 140 = 15 ...

Page 6

... E rec boost 0 [Ω] G Fig. 11 Typ. turn-on energy and switching times versus gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved [ 150 ...

Page 7

... Fig. 17 Typ. turn off characteristics of the boost diode versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved the boost ...

Page 8

... Fig. 19 Forward current vs. voltage drop of input rectifier diode 0.8 0.6 Z thJH 0.4 [K/W] 0.2 0 0.20 0.15 Z thJH 0.10 [K/W] 0.05 0. IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 350 0.8V R RRM 300 250 I 200 FSM T = 45°C VJ 150 [A] 100 T = 125° ...

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