MWI35-12T7T IXYS, MWI35-12T7T Datasheet - Page 7

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MWI35-12T7T

Manufacturer Part Number
MWI35-12T7T
Description
Six-Pack IGBT Modules in E1, E2 and E3-Pack
Manufacturer
IXYS
Datasheet

Specifications of MWI35-12T7T

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
60
Ic80, Tc = 80°c, Igbt, (a)
40
Vce(sat), Typ, Tj = 25°c, Igbt, (v)
1.7
Eoff, Typ, Tj = 125°c, Igbt, (mj)
3.8
Rthjc, Max, Igbt, (k/w)
0.62
If25, Tc = 25°c, Diode, (a)
44
If80, Tc = 80°c, Diode, (a)
29
Package Style
E2
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
100000
NTC
10000
1000
4.6
4.4
4.2
3.8
3.6
3.4
3.2
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
100
4
3
2
1
0
0
Typ. NTC resistance versus temperature
Vce = 600V, Vge = +/-15V, Rg = 27 W , Tvj = 125°C
0
Reverse recovery characteristics
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
25
50
T [°C]
If [A]
75
100
125
150
0.01
0.1
10
1
0.001
Typ. transient thermal impedance
Zth(j-c) - igbt
Zth(j-c) - frd
0.01
tp [s]
0.1
MWI 35-12T7T
1
20081209c
10
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