MWI35-12A7 IXYS, MWI35-12A7 Datasheet
MWI35-12A7
Specifications of MWI35-12A7
Available stocks
Related parts for MWI35-12A7
MWI35-12A7 Summary of contents
Page 1
... 600 d(off Ω = ± off MHz ies 600V Gon (per IGBT) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125° ≤ CEK CES = 39 Ω 125° 280 ...
Page 2
... M Mounting torque (M5) d Symbol Conditions R pin-chip d Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight © 2007 IXYS All rights reserved Maximum Ratings 50 33 Characteristic Values min. typ. = 25° 125°C 1 125° 200 Characteristic Values min. ...
Page 3
... Fig. 2 Typ. output characteristics 125° Fig. 4 Typ. forward characteristics of free wheeling diode 125° 600V 35A 200 400 600 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode V =17V GE 15V 13V 11V 9V 3 25° 300 200 100 MWI35-12A7 0 800 A/μs 1000 20070912a ...
Page 4
... IGBT single pulse 0.00001 0.0001 0.001 0.01 t Fig. 12 Typ. transient thermal impedance 600 ns 500 t d(off) E off t 400 300 V = 600V ±15V GE 200 R = 39Ω 125°C J 100 1500 t d(off) ns 1200 t E off 900 600 300 Ω MWI35-12A7 0 20070912a ...