MMIX4G20N250 IXYS, MMIX4G20N250 Datasheet - Page 2

• Manufacturer Part Number: MMIX4G20N250
• Description: VHV NPT IGBTs (2500V - 4000V)
• Manufacturer: IXYS

Specifications of MMIX4G20N250

• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 23
• Ic110, Tc=110°c, Igbt, (a): 14
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.1
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Tf, Typ, Igbt, (ns): 930
• Rthjc, Max, Igbt, (k/w): 1.25

Symbol
(T
g
I
C
C
C
Q
Q
Q
t
t
t
t
R
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
C(ON)
d(on)
r
d(off)
f
fs
ies
oes
res
thJC
thCS
thJA
g
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
1.
2. Device must be heatsunk for high temperature leakage current
Pulse test, t < 300μs, duty cycle, d < 2%.
measurements to avoid thermal runaway.
Test Conditions
I
V
V
I
Resistive Switching Times
I
V
C
C
C
CE
GE
CE
= 40A, V
= 20A, V
= 20A, V
= 1250V, R
= 20V, V
= 15V, V
ADVANCE TECHNICAL INFORMATION
GE
CE
GE
GE
CE
= 10V, Note 1
= 15V
= 15V, V
= 15V, Note 1
= 20V, f = 1MHz
G
4,835,592
4,881,106
= 10Ω
CE
= 1000V
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Characteristic Values
Min.
8
6,162,665
6,259,123 B1
6,306,728 B1
1190
0.05
Typ.
190
160
136
930
13
53
18
53
22
57
30
8
1.25 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
MMIX4G20N250
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2