MMIX4G20N250 IXYS, MMIX4G20N250 Datasheet

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MMIX4G20N250

Manufacturer Part Number
MMIX4G20N250
Description
VHV NPT IGBTs (2500V - 4000V)
Manufacturer
IXYS
Datasheet

Specifications of MMIX4G20N250

Vces, (v)
2500
Ic25, Tc=25°c, Igbt, (a)
23
Ic110, Tc=110°c, Igbt, (a)
14
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.1
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Tf, Typ, Igbt, (ns)
930
Rthjc, Max, Igbt, (k/w)
1.25
High Voltage IGBT
For Capacitor Discharge
Applications
( Electrically Isolated Tab)
H-Bridge Configuration
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
1.6 mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
50/60Hz, 1 Minute
Test Conditions
I
I
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 90°C
= 25°C, V
= 20V, T
= 25°C
= 250μA, V
= 250μA, V
= 0.8 • V
= 0V, V
= 20A, V
VJ
GE
GE
CES
GE
= 125°C, R
= ±20V
= 19V, 1ms
= 15V, Note 1
GE
CE
, V
= 0V
= V
GE
= 0V
GE
GE
10ms
Note 2, T
= 1MΩ
G
= 10Ω
Advance Technical Information
J
= 125°C
MMIX4G20N250
50..200 / 11..45
3.0
2500
@ 0.8 • V
Min.
-55 ... +150
-55 ... +150
E1C3
Characteristic Values
G3
C1
G1
Maximum Ratings
I
CM
= 200
2500
2500
2500
± 30
± 20
300
260
105
100
150
Typ.
CES
23
14
55
Q1
Q3
8
Q2
Q4
±100
750
Nm/lb.in.
5.0
3.1
10
Max.
E3E4
C2
G2
E2C4
G4
V~
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
g
V
I
V
G = Gate
C = Collector
Features
Applications
Advantages
C25
C1
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
2500V~ Electrical Isolation
High Peak Current Capability
Low Saturation Voltage
Molding Epoxies Meet UL 94 V-0
Flammability Classification
G3
Capacitor Discharge
Pulser Circuits
High Power Density
Easy to Mount
CES
CE(sat)
E1C3
Isolated Tab
G1
E1C3
G1
G3
C1
≤ ≤ ≤ ≤ ≤ 3.1V
= 23A
= 2500V
E
E3E4
C2
DS100278A(7/11)
G4
= Emitter
G2
E2C4
E2C4
G2
G4
C2
E3E4

Related parts for MMIX4G20N250

MMIX4G20N250 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 20A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information MMIX4G20N250 E1C3 Q3 G3 Maximum Ratings 2500 = 1MΩ 2500 GE ± 20 ± 105 10ms 55 = 10Ω 200 ...

Page 2

... 160 136 930 0.05 30 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 MMIX4G20N250 Max 1.25 °C/W °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 ...

Page 3

... Package Outline © 2011 IXYS CORPORATION, All Rights Reserved MMIX4G20N250 ...

Page 4

... J = 25V 21V 17V 13V 15V 11V 100 T = 25º MMIX4G20N250 Fig. 2. Extended Output Characteristics @ 25V GE 23V 21V 19V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V 2 80A C 1 ...

Page 5

... Fig. 11. Maximum Transient Thermal Impedance 0 Fig. 11. Maximum Transient Thermal Impedance aaaaaa 0.01 Pulse Width - Seconds MMIX4G20N250 Fig. 8. Gate Charge V = 1000V 20A 10mA NanoCoulombs G Fig. 10. Capacitance MHz ...

Page 6

... T = 125ºC J 120 800 110 600 100 400 90 200 MMIX4G20N250 MMIX4G20N250 Fig. 13. Resistive Turn-on Rise Time vs. Collector Current R = 10Ω 15V 1250V 125º Amperes C Fig. 15. Resistive Turn-off Switching Times vs ...

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