IXGX82N120B3 IXYS, IXGX82N120B3 Datasheet - Page 4
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IXGX82N120B3
Manufacturer Part Number
IXGX82N120B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet
1.IXGK82N120B3.pdf
(6 pages)
Specifications of IXGX82N120B3
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
230
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
82
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.2
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
7.1
Rthjc, Max, Igbt, (°c/w)
0.1
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
PLUS247
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
100
100
1.000
0.100
0.010
0.001
90
80
70
60
50
40
30
20
10
0
0.00001
0
0
f
= 1 MHz
20
5
40
10
Fig. 7. Transconductance
60
Fig. 9. Capacitance
15
I
0.0001
V
C
80
CE
- Amperes
- Volts
20
C res
100
C oes
25
C ies
120
Fig. 11. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
T
J
= - 40ºC
125ºC
30
25ºC
140
35
0.001
160
Pulse Width - Second
180
40
180
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
200
0
V
I
I
T
R
dV / dt < 10V / ns
C
G
300
CE
J
G
0.01
= 82A
= 10mA
= 125ºC
= 2Ω
= 600V
50
Fig. 10. Reverse-Bias Safe Operating Area
400
100
500
Fig. 8. Gate Charge
Q
600
G
150
- NanoCoulombs
V
CE
700
- Volts
0.1
200
800
IXGK82N120B3
IXGX82N120B3
900
250
1000
IXYS REF: G_82N120B3H1(8T)5-14-09
300
1100
1200
350
1