IXGX82N120B3 IXYS, IXGX82N120B3 Datasheet - Page 2

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IXGX82N120B3

Manufacturer Part Number
IXGX82N120B3
Description
Mid-Frequency Range (15khz-40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGX82N120B3

Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
230
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
82
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.2
Tfi, Typ, Tj=25°c, Igbt, (ns)
100
Eoff, Typ, Tj=125°c, Igbt, (mj)
7.1
Rthjc, Max, Igbt, (°c/w)
0.1
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
PLUS247
Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
on
off
on
off
ies
oes
res
thJC
thCK
g(on)
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
1. Part must be heatsunk for high-temp Ices measurement.
2. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
3. Switching times & energy losses may increase for higher V
I
V
I
Inductive load, T
I
V
Note 3
Inductive load, T
I
V
Note 3
Test Conditions
C
C
C
C
CE
CE
CE
= 60A, V
= I
= 80A, V
= 25V, V
= 0.5 • V
= 0.5 • V
= 80A, V
C110
ADVANCE TECHNICAL INFORMATION
, V
GE
CE
GE
GE
CES
CES
GE
= 15V, V
= 10V, Note 2
= 15V
= 0V, f = 1 MHz
= 15V
, R
, R
4,835,592
4,881,106
J
J
G
G
= 25°C
= 125°C
= 2Ω
= 2Ω
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
5,049,961
5,063,307
5,187,117
CES
5,237,481
5,381,025
5,486,715
Min.
Characteristic Values
35
6,162,665
6,259,123 B1
6,306,728 B1
7900
Typ.
0.15
640
170
350
150
210
100
240
520
5.0
3.3
CE
7.1
6.8
60
50
30
77
32
80
(Clamp), T
0.10 °C/W
Max.
180
6.2
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
mJ
nC
nC
nC
mJ
mJ
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXGK) Outline
PLUS247
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
TM
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
Millimeter
5.45 BSC
IXGK82N120B3
IXGX82N120B3
2 - Drain (Collector)
3 - Source (Emitter)
(IXGX) Outline
7,005,734 B2
7,063,975 B2
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190

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