IXGN50N120C3H1 IXYS, IXGN50N120C3H1 Datasheet - Page 6

• Manufacturer Part Number: IXGN50N120C3H1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGN50N120C3H1

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 95
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 64
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): 58
• Rthjc, Max, Diode, (ºc/w): 0.3
• Package Style: SOT-227

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
180
160
140
120
100
140
120
100
80
60
40
20
80
60
40
20
0
25
2
Fig. 18. Inductive Turn-on Switching Times vs.
Fig. 20. Inductive Turn-on Switching Times vs.
3
t
T
V
t
R
V
35
r i
r i
J
CE
G
CE
= 125ºC, V
= 2Ω , V
= 600V
= 600V
4
45
5
GE
GE
t
= 15V
t
d(on)
55
Junction Temperature
d(on)
= 15V
6
T
J
Gate Resistance
- - - -
- - - -
- Degrees Centigrade
7
R
65
G
- Ohms
8
75
I
I
9
C
I
C
C
= 80A
= 40A
= 80A
85
10
11
95
12
I
105
C
= 40A
13
115
14
125
15
60
55
50
45
40
35
30
25
20
15
32
30
28
26
24
22
20
100
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
20
Fig. 19. Inductive Turn-on Switching Times vs.
R
V
t
r i
G
CE
Fig. 21. Forward Current vs. Forward Voltage
= 2Ω , V
0.4
= 600V
30
GE
t
d(on)
= 15V
0.8
40
Collector Current
- - - -
T
J
IXGN50N120C3H1
= 125ºC
1.2
I
C
V
F
50
- Amperes
- Volts
T
J
1.6
= 125ºC, 25ºC
60
T
J
= 25ºC
2.0
IXYS REF: G_50N120C3H1(7N)03-01-10-A
70
2.4
80
34
32
30
28
26
24
22
20
18
16
14
2.8