IXGN50N120C3H1 IXYS, IXGN50N120C3H1 Datasheet - Page 3

• Manufacturer Part Number: IXGN50N120C3H1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGN50N120C3H1

• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 95
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 64
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): 58
• Rthjc, Max, Diode, (ºc/w): 0.3
• Package Style: SOT-227

© 2010 IXYS CORPORATION, All Rights Reserved
100
100
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0
5
0.5
6
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
1
1.0
7
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
1.5
8
2
2.0
V
9
CE
V
V
CE
GE
- Volts
I
25A
- Volts
C
2.5
10
3
50A
- Volts
= 100A
V
3.0
GE
11
V
GE
= 15V
= 15V
13V
11V
4
13V
11V
3.5
12
J
J
= 125ºC
= 25ºC
T
J
4.0
13
= 25ºC
9V
5V
7V
5
9V
7V
5V
4.5
14
5.0
15
6
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
275
250
225
200
175
150
125
100
90
80
70
60
50
40
30
20
10
75
50
25
0
0
4.0
25
0
Fig. 2. Extended Output Characteristics @ T
V
GE
4.5
= 15V
5
13V
50
Fig. 4. Dependence of V
5.0
Fig. 6. Input Admittance
11V
9V
7V
5V
Junction Temperature
10
T
IXGN50N120C3H1
J
T
- Degrees Centigrade
J
75
V
= 125ºC
5.5
CE
- 40ºC
V
25ºC
GE
- Volts
15
- Volts
I
I
I
C
6.0
C
C
= 100A
= 50A
= 25A
100
CE(sat)
20
6.5
on
125
V
GE
J
25
= 25ºC
7.0
= 15V
150
30
7.5