IXGH36N60A3 IXYS, IXGH36N60A3 Datasheet - Page 6
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IXGH36N60A3
Manufacturer Part Number
IXGH36N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet
1.IXGH36N60A3.pdf
(6 pages)
Specifications of IXGH36N60A3
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
36
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.4
Tfi, Typ, Tj=25°c, Igbt, (ns)
325
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.30
Rthjc, Max, Igbt, (°c/w)
0.56
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
IXYS reserves the right to change limits, test conditions and dimensions.
150
135
120
105
60
55
50
45
40
35
30
25
20
15
10
90
75
60
45
30
15
0
15
0
Fig. 20. Inductive Turn-on Switching Times
Fig. 18. Inductive Turn-on Switching Times
t
T
V
t
R
V
r
J
CE
10
r
CE
G
= 125ºC, V
20
= 5Ω , V
= 400V
= 400V
20
25
t
t
d(on)
30
GE
d(on)
I
vs. Collector Current
GE
C
vs. Gate Resistance
= 15V
= 30A
= 15V
30
40
- - - -
- - - -
I
C
R
- Amperes
G
50
35
- Ohms
T
J
= 125ºC
60
I
C
40
= 60A
70
I
C
45
80
= 15A
T
J
90
= 25ºC
50
100 110 120
55
60
110
100
90
80
70
60
50
40
30
20
10
25
24
23
22
21
20
19
18
17
16
15
65
60
55
50
45
40
35
30
25
20
15
10
5
25
Fig. 19. Inductive Turn-on Switching Times
t
R
V
r
CE
G
35
= 5Ω , V
= 400V
45
IXGA36N60A3 IXGP36N60A3
vs. Junction Temperature
t
GE
T
d(on)
J
55
= 15V
- Degrees Centigrade
- - - -
65
75
85
I
I
I
95
IXYS REF: G_36N60A3(55) 07-03-08-A
IXGH36N60A3
C
C
C
= 60A
= 30A
= 15A
105
115
125
27
26
25
24
23
22
21
20
19
18
17
16
15