IXGH36N60A3 IXYS, IXGH36N60A3 Datasheet

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IXGH36N60A3

Manufacturer Part Number
IXGH36N60A3
Description
Low-Frequency Range (DC-15khz), A-IGBT Low VCE(sat)
Manufacturer
IXYS
Datasheet

Specifications of IXGH36N60A3

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
-
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
36
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.4
Tfi, Typ, Tj=25°c, Igbt, (ns)
325
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.30
Rthjc, Max, Igbt, (°c/w)
0.56
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
GenX3
Ultra Low Vsat PT IGBT for
up to 5kHz switching
Symbol
V
V
V
V
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C unless otherwise specified)
Test Conditions
I
I
V
V
V
I
TM
T
T
Continuous
Transient
T
T
V
Clamped inductive load @ ≤ 600V
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247 & TO-220)
TO-263
TO-220
TO-247
C
C
C
C
J
C
C
C
CE
GE
CE
GE
= 25°C to 150°C, R
= 25°C to 150°C
= 110°C
= 25°C
= 25°C, 1ms
= 250μA, V
= 250μA, V
= 30A, V
= 0V, V
= V
= 0V
= 15V, T
600V IGBT
CES
GE
GE
VJ
= ± 20V
= 15V, Note 1
GE
CE
= 125°C, R
= V
= 0V
GE
GE
= 1MΩ
G
T
= 5Ω
J
= 125°C
Preliminary Technical Information
IXGA36N60A3
IXGP36N60A3
IXGH36N60A3
-55 ... +150
-55 ... +150
I
CM
Min.
Characteristic Values
1.13/10
600
3.0
Maximum Ratings
= 60
± 20
± 30
600
600
200
220
150
300
260
2.5
3.0
6.0
36
Typ.
±100 nA
Nm/lb.in.
250 μA
Max.
5.0
1.4
25 μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
V
g
g
g
V
I
V
TO-263 (IXGA)
TO-247 (IXGH)
G = Gate
E = Emitter
Features
Advantages
Applications
TO-220 (IXGP)
C110
Optimized for low conduction losses
International standard packages
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
G
G
C
C
E
E
≤ ≤ ≤ ≤ ≤ 1.4V
= 600V
= 36A
E
C
TAB = Collector
= Collector
(TAB)
(TAB)
DS100006(07/08)
(TAB)

Related parts for IXGH36N60A3

IXGH36N60A3 Summary of contents

Page 1

... 0V ± 20V GES 30A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Maximum Ratings 600 = 1MΩ 600 ± 20 ± 200 = 5Ω 220 -55 ... +150 150 -55 ... +150 ...

Page 2

... CES 0.74 330 325 3. 1.50 500 500 5.30 0.25 0.50 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 TO-247 (IXGH) Outline Max Dim. Millimeter ns Min. Max 4.7 A 2 1.0 b 1.65 2.13 mJ ...

Page 3

... Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance 200 180 160 140 120 100 125ºC J 25º 40º 3.5 4.0 4.5 5.0 5.5 6.0 6 Volts GE IXGH36N60A3 CE(sat 60A 30A 15A C 75 100 125 150 7.0 7.5 8.0 8.5 ...

Page 4

... Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 Fig. 17. Gate Charge V = 600V 30A NanoCoulombs G Fig. 18. Capacitance MHz ...

Page 5

... R - Ohms G Fig. 17. Inductive Turn-off Switching Times vs. Junction Temperature d(off 5Ω 15V 400V Degrees Centigrade J IXGH36N60A3 2.0 1.8 1 60A C 1.4 1.2 1 30A C 0.8 0.6 0.4 0 15A C 0.0 95 105 115 125 1300 1200 1100 1000 900 800 I = 60A ...

Page 6

... IXGA36N60A3 IXGP36N60A3 Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature d(on 5Ω 15V 400V Degrees Centigrade J IXGH36N60A3 60A 30A 15A 105 115 125 IXYS REF: G_36N60A3(55) 07-03-08-A ...

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