IXGP50N60C4 IXYS, IXGP50N60C4 Datasheet

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IXGP50N60C4

Manufacturer Part Number
IXGP50N60C4
Description
High-Frequency Range (>40khz)
Manufacturer
IXYS
Datasheet

Specifications of IXGP50N60C4

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
90
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
46
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.3
Tfi, Typ, Tj=25°c, Igbt, (ns)
63
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.9
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-220
High-Gain IGBTs
High-Speed PT Trench IGBT
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
M
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
TO-263
TO-220
TO-247
Test Conditions
I
I
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 25°C, 1ms
= 25°C
= 15V, T
= 250μA, V
= 250μA, V
= V
= 0V, V
= 36A, V
CES
, V
GE
VJ
GE
GE
= ±20V
= 125°C, R
= 0V
GE
CE
= 15V, Note 1
= 0V
= V
GE
GE
= 1MΩ
G
= 10Ω
T
T
J
J
= 125°C
= 125°C
IXGA50N60C4
IXGH50N60C4
IXGP50N60C4
10..65 / 2.2..14.6
600
Min.
4.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
V
CE
1.13 / 10
I
CM
Typ.
1.6
1.9
= 72
V
±20
±30
220
300
150
300
260
600
600
2.5
3.0
6.0
90
46
CES
Max.
±100
Nm/lb.in.
6.5
2.3
25
1 mA
N/lb.
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
g
g
V
I
V
TO-263 AA (IXGA)
TO-220AB (IXGP)
TO-247 (IXGH)
G = Gate
S = Emitter
Features
Advantages
Applications
C110
Optimized for Low Switching Losses
International Standard Packages
Square RBSOA
Easy to Mount
Space Savings
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Lamp Ballasts
CES
CE(sat)
G
G
C
C E
= 600V
= 46A
≤ ≤ ≤ ≤ ≤ 2.3V
E
G
E
D
Tab = Collector
C (Tab)
C (Tab)
C (Tab)
= Collector
DS100298C(10/11)

Related parts for IXGP50N60C4

IXGP50N60C4 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 36A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 220 = 10Ω ≤ CES 300 -55 ...

Page 2

... Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 TO-263 Outline Max Gate Collector 3 = Emitter Collector 1. ...

Page 3

... T = 25ºC J 140 120 100 IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Fig. 2. Extended Output Characteristics @ 15V GE 14V 13V 12V 11V Volts CE Fig. 4. Dependence of V Junction Temperature 15V ...

Page 4

... C ies oes res 10 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Fig. 8. Gate Charge V = 300V 36A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125ºC J Ω ...

Page 5

... IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current - - - - E E off on Ω 15V 400V 125ºC, 25º ...

Page 6

... Ω 15V 400V 72A 36A 105 115 125 IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 400V 25º 125º ...

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