IXGR72N60B3D1 IXYS, IXGR72N60B3D1 Datasheet - Page 3

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IXGR72N60B3D1

Manufacturer Part Number
IXGR72N60B3D1
Description
Mid-Frequency Range (15khz-40khz), w/ Diode
Manufacturer
IXYS
Datasheet

Specifications of IXGR72N60B3D1

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.80
Tfi, Typ, Tj=25°c, Igbt, (ns)
90
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.20
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
36
Rthjc, Max, Diode, (ºc/w)
0.85
Package Style
ISOPLUS 247
© 2009 IXYS CORPORATION, All Rights Reserved
120
100
120
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0.0
0.0
5
0.2
0.2
6
Fig. 5. Collector-to-Emitter Voltage
0.4
0.4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter Voltage
0.6
0.6
I
8
C
0.8
0.8
= 120A
60A
30A
V
V
V
1.0
1.0
9
CE
CE
GE
@ 125ºC
@ 25ºC
- Volts
- Volts
- Volts
1.2
1.2
10
V
V
GE
GE
= 15V
1.4
1.4
= 15V
11
13V
11V
13V
11V
9V
1.6
1.6
12
1.8
1.8
5V
9V
7V
7V
T
J
13
2.0
= 25ºC
2.0
14
2.2
2.2
2.4
2.4
15
330
300
270
240
210
180
150
120
180
160
140
120
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
90
60
30
80
60
40
20
0
0
4.0
-50
0
V
GE
Fig. 2. Extended Output Characteristics
4.5
-25
V
1
= 15V
GE
Fig. 4. Dependence of V
= 15V
13V
11V
5.0
T
2
0
Fig. 6. Input Admittance
J
Junction Temperature
= 125ºC
T
- 40ºC
J
9V
7V
25ºC
- Degrees Centigrade
5.5
25
3
V
V
IXGR72N60B3D1
CE
GE
@ 25ºC
- Volts
- Volts
6.0
50
4
6.5
75
5
I
I
I
CE(sat)
C
C
C
= 30A
= 120A
= 60A
100
7.0
6
on
125
7.5
7
150
8.0
8

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