IXGR72N60B3D1 IXYS, IXGR72N60B3D1 Datasheet

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IXGR72N60B3D1

Manufacturer Part Number
IXGR72N60B3D1
Description
Mid-Frequency Range (15khz-40khz), w/ Diode
Manufacturer
IXYS
Datasheet

Specifications of IXGR72N60B3D1

Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.80
Tfi, Typ, Tj=25°c, Igbt, (ns)
90
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.20
Rthjc, Max, Igbt, (°c/w)
0.62
If, Tj=110°c, Diode, (a)
36
Rthjc, Max, Diode, (ºc/w)
0.85
Package Style
ISOPLUS 247
GenX3
IGBT w/Diode
(Electrically Isolated Back Surface)
Medium Speed Low Vsat PT IGBTs
for 5-40 kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
V
F
T
T
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
A
CES
GES
J
JM
stg
C
L
SOLD
CES
CGR
GES
GEM
AS
C
ISOL
GE(th)
CE(sat)
J
= 25°C, Unless Otherwise specified)
TM
T
T
Continuous
Transient
T
T
T
T
T
T
V
Clamped Inductive Load
T
50/60 Hz, RMS, t = 1Minute
I
Mounting Force
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
Test Conditions
Test Conditions
I
V
V
I
ISOL
C
C
J
J
C
C
C
C
C
C
C
GE
CE
CE
B3-Class
= 60A, V
= 25°C
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by Leads)
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 15V, T
= 25°C
< 1mA
= 0V, V
= 250μA, V
= V
CES,
GE
V
GE
VJ
GE
= ±20V
= 125°C, R
= 15V, Note 1
CE
t = 20 Seconds
= 0V
= V
GE
GE
= 1MΩ
G
Preliminary Technical Information
= 3Ω
T
T
J
J
= 125°C
= 125°C
IXGR72N60B3D1
3.0
Min.
20..120/4.5..27
Characteristic Values
-55 ... +150
-55 ... +150
V
Maximum Ratings
I
CM
CE
= 240
≤ 600
2500
3000
Typ.
1.75
1.50
260
±20
±30
360
220
200
150
300
600
600
75
40
36
20
5
Max.
±100
1.80
300
5.0
5
N/lb
mA
mJ
V~
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
A
A
V
V
g
V
I
V
t
ISOPLUS 247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Avalanche Rated
Anti-Parallel Ultra Fast Diode
2500V Electrical Isolation
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
TM
=
=
≤ ≤ ≤ ≤ ≤
= 600V
C = Collector
£
40A
1.80V
90ns
ISOLATED TAB
DS99874A(02/09)

Related parts for IXGR72N60B3D1

IXGR72N60B3D1 Summary of contents

Page 1

... CES CE CES ±20V 0V, V GES 60A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGR72N60B3D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 360 20 220 = 3Ω 240 G CM ≤ 600 V CE 200 -55 ...

Page 2

... Unless Otherwise Specified) J Min. Typ 150°C 1 100°C 8 30V R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGR72N60B3D1 ISOPLUS247 (IXGR) Outline Max 330 ns 160 ns 2. 0.62 °C/W °C/W Max ...

Page 3

... GE 13V 11V 9V 7V 1.4 1.6 1.8 2.0 2.2 2 15V GE 13V 11V 1.4 1.6 1.8 2.0 2.2 2 25º IXGR72N60B3D1 Fig. 2. Extended Output Characteristics @ 25ºC 330 V = 15V GE 300 13V 270 11V 240 210 9V 180 150 120 Volts CE Fig. 4. Dependence of V Junction Temperature 1.3 V ...

Page 4

... C ies 240 200 160 C oes 120 80 C res 40 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGR72N60B3D1 Fig. 8. Gate Charge V = 300V 60A 10mA 100 120 140 160 180 200 220 240 Q - NanoCoulombs G Fig ...

Page 5

... T = 125ºC J 180 220 160 205 140 190 120 175 100 160 = 25ºC 145 J 130 100 IXGR72N60B3D1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off 3Ω 15V 480V T = 125º ...

Page 6

... Ω 15V 480V 105 115 125 IXGR72N60B3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 480V 25ºC, 125º ...

Page 7

... I = 30A, 60A, 120A 110 F 100 90 80 160 0 200 400 600 -di /dt F Fig. 25. Recorvery Time t -di /dt F 0.01 0.1 0.01 Pulse Width [ s ] IXGR72N60B3D1 100° 300V 120A, 60A, 30A A/μs 1000 0 200 400 /dt F Fig. 23. Peak ReverseCurrent I ...

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