IXGH24N60C4D1 IXYS, IXGH24N60C4D1 Datasheet - Page 7

• Manufacturer Part Number: IXGH24N60C4D1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGH24N60C4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 56
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 24
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 68
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.5
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tj=110°c, Diode, (a): 18
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-247

IXGH24N60C4D1
Fig. 21. Forward Current I
vs. V
Fig. 22. Reverse Recovery Change
Fig. 23. Peak Reverse Current
F
F
Q
vs. -di
/dt
I
vs. -di
/dt
r
F
RM
F
Fig. 24. Dynamic Parameters
Fig. 25. Recovery Time t
vs. -di
/dt
Fig. 26. Peak Forward Voltage
r
F
Q
I
vs. T
V
, t
vs. -di
/dt
r,
RM
VJ
FR
r
F
Fig. 27. Transient Thermal Resistance Junction to Case
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