IXGH24N60C4D1 IXYS, IXGH24N60C4D1 Datasheet - Page 4

• Manufacturer Part Number: IXGH24N60C4D1
• Description: High-Frequency Range (>40khz), C-IGBT w/Diode
• Manufacturer: IXYS

Specifications of IXGH24N60C4D1

• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 56
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 24
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 68
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.5
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tj=110°c, Diode, (a): 18
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-247

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
24
20
16
12
10
0.00001
8
4
0
0
0
f
= 1 MHz
5
5
10
15
10
Fig. 7. Transconductance
20
Fig. 9. Capacitance
15
0.0001
25
I
V
C
CE
- Amperes
30
- Volts
20
35
25
40
C res
C ies
C oes
Fig. 11. Maximum Transient Thermal Impedance
T
J
45
30
= - 40ºC
125ºC
25ºC
50
0.001
35
55
Pulse Width - Second
60
40
16
14
12
10
55
50
45
40
35
30
25
20
15
10
8
6
4
2
0
5
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
150
0.01
C
G
CE
= 125ºC
= 10
= 24A
= 1mA
= 300V
10
Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
250
20
Fig. 8. Gate Charge
300
Q
G
IXGH24N60C4D1
- NanoCoulombs
30
V
350
CE
- Volts
0.1
400
40
450
50
500
550
60
600
1
650
70