IXGJ50N60C4D1 IXYS, IXGJ50N60C4D1 Datasheet - Page 6
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IXGJ50N60C4D1
Manufacturer Part Number
IXGJ50N60C4D1
Description
PT Trench IGBTs
Manufacturer
IXYS
Datasheet
1.IXGJ50N60C4D1.pdf
(7 pages)
Specifications of IXGJ50N60C4D1
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
52
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
21
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
63
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.9
Rthjc, Max, Igbt, (°c/w)
1
If, Tj=110°c, Diode, (a)
12
Rthjc, Max, Diode, (ºc/w)
2
Package Style
ISO TO-247
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
160
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
0
10
25
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
t
T
V
35
r i
J
CE
= 125ºC, V
= 400V
15
45
I
C
GE
I
= 72A
t
Junction Temperature
55
d(on)
C
= 15V
= 36A
T
J
Gate Resistance
- - - -
- Degrees Centigrade
R
20
65
G
- Ohms
75
I
C
= 36A
25
t
R
V
85
I
r i
CE
G
C
= 10
= 400V
= 72A
Ω
95
, V
GE
30
t
105
d(on)
= 15V
- - - -
115
35
125
90
80
70
60
50
40
30
20
56
52
48
44
40
36
32
28
24
140
120
100
80
60
40
20
0
15
Fig. 19. Inductive Turn-on Switching Times vs.
t
R
V
r i
CE
G
T
= 10
J
= 400V
= 25ºC
25
Ω
, V
GE
t
T
d(on)
= 15V
J
= 125ºC
35
Collector Current
- - - -
IXGJ50N60C4D1
I
C
45
- Amperes
55
65
IXYS REF: G_50N60C4(L5)10-06-11-A
75
80
70
60
50
40
30
20
10