IXGJ50N60C4D1 IXYS, IXGJ50N60C4D1 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/3/352/ixys_sml.jpg)
IXGJ50N60C4D1
Manufacturer Part Number
IXGJ50N60C4D1
Description
PT Trench IGBTs
Manufacturer
IXYS
Datasheet
1.IXGJ50N60C4D1.pdf
(7 pages)
Specifications of IXGJ50N60C4D1
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
52
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
21
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
63
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.9
Rthjc, Max, Igbt, (°c/w)
1
If, Tj=110°c, Diode, (a)
12
Rthjc, Max, Diode, (ºc/w)
2
Package Style
ISO TO-247
© 2011 IXYS CORPORATION, All Rights Reserved
100
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0
6
0
7
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
18A
8
36A
Gate-to-Emitter Voltage
I
1
1
9
C
= 72A
V
CE
V
10
V
CE
- Volts
GE
- Volts
1.5
1.5
- Volts
11
V
V
GE
GE
= 15V
= 15V
13V
11V
10V
13V
12V
11V
10V
12
2
2
J
J
= 125ºC
= 25ºC
13
2.5
2.5
T
J
= 25ºC
14
9V
8V
7V
6V
9V
8V
7V
6V
15
3
3
160
140
120
100
300
250
200
150
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
50
0
0
-25
4.5
0
V
GE
Fig. 2. Extended Output Characteristics @ T
V
GE
= 15V
5
= 15V
0
5.5
5
14V
Fig. 4. Dependence of V
6
25
Fig. 6. Input Admittance
Junction Temperature
10
T
6.5
J
13V
- Degrees Centigrade
IXGJ50N60C4D1
V
50
CE
V
7
GE
- Volts
15
12V
- Volts
7.5
75
T
J
I
I
I
11V
C
C
C
= - 40ºC
= 72A
= 36A
= 18A
8
CE(sat)
25ºC
20
100
10V
8.5
on
125ºC
9V
9
J
25
125
= 25ºC
8V
9.5
7V
6V
150
30
10