IXYH82N120C3 IXYS, IXYH82N120C3 Datasheet - Page 5

• Manufacturer Part Number: IXYH82N120C3
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXYH82N120C3

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 160
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 82
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 93
• Eoff, Typ, Tj = 125°c, Igbt (mj): 3.70
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.12
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-247

© 2011 IXYS CORPORATION, All Rights Reserved
4.5
3.5
2.5
1.5
0.5
280
240
200
160
120
8
7
6
5
4
3
2
1
0
80
40
4
3
2
1
0
2
25
40
E
T
V
Fig. 16. Inductive Turn-off Switching Times vs.
off
J
CE
E
R
V
Fig. 12. Inductive Switching Energy Loss vs.
Fig. 14. Inductive Switching Energy Loss vs.
= 125ºC , V
off
G
CE
= 600V
4
= 2
= 600V
50
Ω ,
V
GE
6
50
GE
E
E
= 15V
on
= 15V
on
T
Junction Temperature
J
- - - -
- - - -
60
- Degrees Centigrade
Collector Current
Gate Resistance
8
T
I
J
C
R
= 25ºC
- Amperes
G
- Ohms
10
70
75
R
V
t
f i
CE
G
I
I
C
C
= 2
I
12
= 600V
C
= 80A
= 40A
Ω
80
= 40A
T
I
J
C
, V
= 125ºC
= 80A
GE
14
100
= 15V
t
d(off)
90
- - - -
16
100
18
125
240
230
220
210
200
190
180
170
16
14
12
10
8
6
4
2
0
9
8
7
6
5
4
3
2
1
4.5
3.5
2.5
1.5
0.5
200
180
160
140
120
100
240
200
160
120
80
60
40
5
4
3
2
1
80
40
40
0
2
25
Fig. 15. Inductive Turn-off Switching Times vs.
Fig. 17. Inductive Turn-off Switching Times vs.
T
V
t
E
R
V
t
R
V
Fig. 13. Inductive Switching Energy Loss vs.
f i
J
CE
off
CE
f i
G
G
CE
T
= 125ºC, V
4
= 2
= 2
J
= 600V
= 600V
= 600V
= 125ºC
50
Ω ,
Ω
, V
V
6
GE
50
GE
GE
t
d(on)
= 15V
E
= 15V
Junction Temperature
= 15V
t
on
d(off)
60
T
I
Collector Current
J
Gate Resistance
- - - -
- - - -
C
- Degrees Centigrade
8
I
- - - -
= 40A
C
- Amperes
R
I
G
C
IXYH82N120C3
- Ohms
= 80A
10
T
75
70
J
= 25ºC
I
I
C
C
= 40A
= 80A
12
80
100
14
90
16
125
18
100
780
700
620
540
460
380
300
220
140
280
260
240
220
200
180
160
10
9
8
7
6
5
4
3
2
1