IXYH82N120C3 IXYS, IXYH82N120C3 Datasheet

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IXYH82N120C3

Manufacturer Part Number
IXYH82N120C3
Description
XPT 1200V
Manufacturer
IXYS
Datasheet

Specifications of IXYH82N120C3

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
160
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
82
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.2
Tfi, Typ, Tj = 25°c, Igbt, (ns)
93
Eoff, Typ, Tj = 125°c, Igbt (mj)
3.70
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.12
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-247
1200V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
A
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 82A, V
= 250μA, V
TM
CES
, V
IGBT
GE
VJ
GE
GE
= ±20V
= 125°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
= 1MΩ
G
Preliminary Technical Information
= 2Ω
T
T
J
J
= 125°C
= 125°C
IXYH82N120C3
1200
Min.
Characteristic Values
3.0
@V
-55 ... +150
-55 ... +150
Maximum Ratings
I
CE
CM
1.13/10
Typ.
2.75
3.50
= 164
1040
1200
1200
160
800
±20
±30
320
V
150
300
260
82
41
CES
6
±100
3.20
Max.
250
Nm/lb.in.
5.0
25
mJ
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Positive Thermal Coefficient of
Avalanche Rated
High Current Handling Capability
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
G
C
E
= 1200V
= 82A
= 93ns
≤ ≤ ≤ ≤ ≤ 3.2V
C
Tab = Collector
Tab
= Collector
DS100335A(08/11)

Related parts for IXYH82N120C3

IXYH82N120C3 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 82A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXYH82N120C3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 160 82 320 41 800 = 2Ω 164 G CM ≤ CES 1040 -55 ...

Page 2

... CES 4.95 Ω 192 93 2. 7.45 Ω 200 95 3.70 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYH82N120C3 TO-247 (IXYH) Outline Max Terminals Gate 3 - Emitter mJ Dim. Millimeter 280 ns Min. Max 4.7 A 2.2 5. ...

Page 3

... J = 15V GE 13V 11V 10V 3.5 4 4.5 5 5.5 6 6.5 160 T = 25ºC J 140 120 100 IXYH82N120C3 Fig. 2. Extended Output Characteristics @ 15V 11V GE 13V 10V 12V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 2 164A 1.8 C 1.6 1 ...

Page 4

... C ies 140 120 100 C oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXYH82N120C3 Fig. 8. Gate Charge V = 600V 82A 10mA 100 120 140 160 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º ...

Page 5

... 15V 600V CE 220 210 T = 125ºC J 200 190 180 170 80 90 100 IXYH82N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V 125º 25ºC ...

Page 6

... I = 80A 40A 100 125 IXYH82N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 600V 125º Amperes ...

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