IXYN82N120C3 IXYS, IXYN82N120C3 Datasheet - Page 4

• Manufacturer Part Number: IXYN82N120C3
• Description: XPT 1200V
• Manufacturer: IXYS

Specifications of IXYN82N120C3

• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 105
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 46
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 3.2
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 93
• Eoff, Typ, Tj = 125°c, Igbt (mj): 3.70
• Eoff, Typ, Tj = 150°c, Igbt (mj): -
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: SOT-227B

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
10
0.1
80
70
60
50
40
30
20
10
0.00001
0
1
0
0
f
= 1 MHz
20
5
10
40
Fig. 7. Transconductance
Fig. 9. Capacitance
0.0001
15
60
I
V
C
CE
- Amperes
20
- Volts
80
100
25
Fig. 11. Maximum Transient Thermal Impedance
T
0.001
J
120
30
= - 40ºC
25ºC
125ºC
C ies
C oes
C res
140
35
Pulse Width - Seconds
160
40
0.01
180
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
200
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
300
CE
20
J
G
= 82A
= 10mA
= 125ºC
= 2
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
40
400
60
0.1
500
Fig. 8. Gate Charge
80
Q
600
G
- NanoCoulombs
V
100
CE
700
IXYN82N120C3
- Volts
120
800
140
1
900
160
1000
180
1100
200
1200
220
10