IXYN82N120C3 IXYS, IXYN82N120C3 Datasheet

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IXYN82N120C3

Manufacturer Part Number
IXYN82N120C3
Description
XPT 1200V
Manufacturer
IXYS
Datasheet

Specifications of IXYN82N120C3

Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
105
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
46
Vce(sat), Typ, Tj = 25°c, Igbt (v)
3.2
Tfi, Typ, Tj = 25°c, Igbt, (ns)
93
Eoff, Typ, Tj = 125°c, Igbt (mj)
3.70
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.25
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
SOT-227B
1200V XPT
GenX3
High-Speed IGBT
for 20-50 kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
V
M
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
A
CES
GES
J
JM
stg
CES
CGR
GES
GEM
AS
C
ISOL
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Terminal Connection Torque
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
V
T
50/60Hz
I
Mounting Torque
Test Conditions
I
V
V
I
I
ISOL
C
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 25°C
= 15V, T
≤ 1mA
= 250μA, V
= V
= 0V, V
= 82A, V
= 250μA, V
TM
CES
, V
IGBT
GE
VJ
GE
GE
= ±20V
= 125°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
t = 1min
t = 1s
GE
GE
= 1MΩ
G
= 2Ω
Advance Technical Information
T
T
J
J
= 125°C
= 125°C
IXYN82N120C3
1200
Min.
Characteristic Values
2.5
@V
-55 ... +150
-55 ... +150
Maximum Ratings
I
CE
CM
1.3/11.5
1.5/13
Typ.
2.75
3.50
= 164
2500
3000
1200
1200
105
800
±20
±30
320
V
500
150
46
41
30
CES
±100
3.20
Nm/lb.in.
Max.
Nm/lb.in.
250 μA
4.5
25
mJ
V~
V~
μA
nA
°C
°C
°C
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
V
I
V
t
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Isolation Voltage
Positive Thermal Coefficient of
Avalanche Rated
High Current Handling Capability
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Vce(sat)
CES
CE(sat)
Main or Kelvin Emitter
either emitter terminal can be used as
E153432
= 1200V
= 46A
= 93ns
≤ ≤ ≤ ≤ ≤ 3.2V
G
2500V~
E
C
DS100389(09/11)
E

Related parts for IXYN82N120C3

IXYN82N120C3 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 82A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXYN82N120C3 Maximum Ratings 1200 = 1MΩ 1200 GE ±20 ±30 105 46 320 41 800 = 2Ω 164 G CM ≤ CES 500 -55 ...

Page 2

... CES 4.95 Ω 192 93 2. 7.45 Ω 200 95 3.70 0.05 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXYN82N120C3 SOT-227B miniBLOC (IXYN) Max 5. 0.25 °C/W °C 6,404,065 B1 6,683,344 ...

Page 3

... J = 15V GE 13V 11V 10V 3.5 4 4.5 5 5.5 6 6.5 160 T = 25ºC J 140 120 100 IXYN82N120C3 Fig. 2. Extended Output Characteristics @ 15V 11V GE 13V 10V 12V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 2 164A 1.8 C 1.6 1 ...

Page 4

... C ies 140 120 100 C oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXYN82N120C3 Fig. 8. Gate Charge V = 600V 82A 10mA 100 120 140 160 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º ...

Page 5

... 15V 600V CE 220 160 210 120 T = 125ºC J 200 190 180 170 80 90 100 IXYN82N120C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 600V 125º 25ºC ...

Page 6

... I = 80A 40A 100 125 IXYN82N120C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 600V 125º Amperes ...

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