IXYH40N120C3D1 IXYS, IXYH40N120C3D1 Datasheet - Page 4
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IXYH40N120C3D1
Manufacturer Part Number
IXYH40N120C3D1
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXYH40N120C3D1.pdf
(7 pages)
Specifications of IXYH40N120C3D1
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
64
Ic90, Tc = 90°c, Igbt, (a)
40
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
4.0
Tfi, Typ, Tj = 25°c, Igbt, (ns)
38
Eoff, Typ, Tj = 125°c, Igbt (mj)
0.70
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.26
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
25
Rthjc, Max, Diode (k/w)
0.90
Package Style
TO-247
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
0.001
100
0.01
28
24
20
16
12
10
8
4
0
0.1
0.00001
1
0
0
f
= 1 MHz
10
5
20
10
Fig. 7. Transconductance
30
Fig. 9. Capacitance
15
0.0001
I
V
40
C
CE
- Amperes
- Volts
20
50
25
60
Fig. 11. Maximum Transient Thermal Impedance
T
30
J
70
= - 40ºC
C oes
150ºC
C ies
C res
25ºC
35
0.001
80
Pulse Width - Second
40
90
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
T
R
dv / dt < 10V / ns
J
G
V
I
I
300
C
G
CE
= 150ºC
= 10
10
0.01
= 40A
= 10mA
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
Ω
400
20
500
30
Fig. 8. Gate Charge
600
IXYH40N120C3D1
Q
G
- NanoCoulombs
V
40
700
CE
- Volts
800
50
0.1
900
60
1000
70
1100
80
1200
1300
90
1