IXYH40N120C3D1 IXYS, IXYH40N120C3D1 Datasheet - Page 3
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IXYH40N120C3D1
Manufacturer Part Number
IXYH40N120C3D1
Description
XPT 1200V
Manufacturer
IXYS
Datasheet
1.IXYH40N120C3D1.pdf
(7 pages)
Specifications of IXYH40N120C3D1
Vces, (v)
1200
Ic25, Tc = 25°c, Igbt, (a)
64
Ic90, Tc = 90°c, Igbt, (a)
40
Ic110, Tc = 110°c, Igbt, (a)
-
Vce(sat), Typ, Tj = 25°c, Igbt (v)
4.0
Tfi, Typ, Tj = 25°c, Igbt, (ns)
38
Eoff, Typ, Tj = 125°c, Igbt (mj)
0.70
Eoff, Typ, Tj = 150°c, Igbt (mj)
-
Rthjc, Max, Igbt (c/w)
0.26
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
25
Rthjc, Max, Diode (k/w)
0.90
Package Style
TO-247
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
© 2011 IXYS CORPORATION, All Rights Reserved
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
11
10
0
0
9
8
7
6
5
4
3
2
0
0
6
0.5
1
7
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
1
Fig. 5. Collector-to-Emitter Voltage vs.
2
8
1.5
Gate-to-Emitter Voltage
2
3
9
20A
2.5
V
V
40A
10
V
4
CE
CE
GE
V
- Volts
- Volts
GE
- Volts
3
= 15V
I
11
C
13V
11V
10V
5
9V
3.5
= 80A
V
GE
= 15V
12
13V
12V
11V
10V
6
4
J
J
4.5
= 150ºC
= 25ºC
13
7
T
5
J
= 25ºC
14
8
5.5
5V
6V
8V
7V
9V
8V
7V
6V
15
6
9
140
120
100
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
70
60
50
40
30
20
10
80
60
40
20
0
0
-50
4
0
Fig. 2. Extended Output Characteristics @ T
4.5
V
GE
-25
= 15V
5
5
5.5
0
Fig. 4. Dependence of V
Fig. 6. Input Admittance
6
Junction Temperature
25
10
T
IXYH40N120C3D1
J
6.5
- Degrees Centigrade
50
V
V
7
GE
CE
I
C
I
15
- Volts
- Volts
= 80A
C
I
7.5
C
= 40A
75
= 20A
T
8
J
CE(sat)
= - 40ºC
100
20
150ºC
8.5
25ºC
V
GE
13V
on
= 15V
125
9
12V
11V
J
25
9.5
10V
= 25ºC
150
9V
10
8V
7V
6V
10.5
175
30