IXXK200N60C3 IXYS, IXXK200N60C3 Datasheet - Page 3
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IXXK200N60C3
Manufacturer Part Number
IXXK200N60C3
Description
XPT 600V
Manufacturer
IXYS
Datasheet
1.IXXK200N60C3.pdf
(6 pages)
Specifications of IXXK200N60C3
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
340
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
200
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.1
Tfi, Typ, Tj = 25°c, Igbt, (ns)
80
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
2.1
Rthjc, Max, Igbt (c/w)
0.092
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-264
© 2011 IXYS CORPORATION, All Rights Reserved
200
150
100
200
150
100
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
50
0
0
0
0
9
0.4
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.4
10
Fig. 5. Collector-to-Emitter Voltage vs.
100A
0.8
0.8
150A
Gate-to-Emitter Voltage
11
1.2
I
C
V
= 200A
CE
V
V
CE
1.2
GE
- Volts
- Volts
1.6
12
- Volts
V
1.6
GE
2
V
GE
= 15V
13
13V
12V
= 15V
13V
12V
J
J
2.4
= 150ºC
= 25ºC
2
T
14
J
= 25ºC
2.8
11V
8V
7V
10V
9V
11V
10V
9V
8V
7V
6V
2.4
3.2
15
350
300
250
200
150
100
200
180
160
140
120
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
80
60
40
20
0
0
-50
0
4
V
GE
Fig. 2. Extended Output Characteristics @ T
V
= 15V
GE
-25
2
= 15V
5
4
13V
0
Fig. 4. Dependence of V
6
Fig. 6. Input Admittance
12V
Junction Temperature
25
6
T
11V
10V
9V
8V
7V
J
- Degrees Centigrade
V
CE
7
50
V
8
GE
- Volts
I
C
I
= 200A
- Volts
C
T
I
= 150A
J
C
75
10
= 100A
= 150ºC
8
IXXK200N60C3
IXXX200N60C3
25ºC
CE(sat)
100
12
9
on
125
14
J
= 25ºC
10
- 40ºC
150
16
175
11
18