IXXK200N60C3 IXYS, IXXK200N60C3 Datasheet

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IXXK200N60C3

Manufacturer Part Number
IXXK200N60C3
Description
XPT 600V
Manufacturer
IXYS
Datasheet

Specifications of IXXK200N60C3

Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
340
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
200
Vce(sat), Typ, Tj = 25°c, Igbt (v)
2.1
Tfi, Typ, Tj = 25°c, Igbt, (ns)
80
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
2.1
Rthjc, Max, Igbt (c/w)
0.092
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-264
XPT
GenX3
Extreme Light Punch Through
IGBT for 20-60kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2011 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C110
CM
A
CES
GES
sc
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
600V
Clamped Inductive Load
T
T
Continuous
Transient
T
Terminal Current Limit
T
T
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
TM
Test Conditions
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
C
GE
GE
CE
CE
G
= 25°C ( Chip Capability )
= 25°C to 175°C
= 25°C to 175°C, R
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, V
= 10Ω, Non Repetitive
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 100A, V
= 250μA, V
CES
, V
GE
CE
VJ
GE
= ±20V
GE
= 360V, T
= 150°C, R
= 0V
CE
GE
= 15V, Note 1
= 0V
= V
(PLUS247)
GE
GE
J
= 1MΩ
G
= 150°C
= 1Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXXK200N60C3
IXXX200N60C3
20..120 /4.5..27
Characteristic Values
600
Min.
3.5
@V
-55 ... +175
-55 ... +175
Maximum Ratings
CE
I
CM
1.13/10
1.60
1.93
= 400
Typ.
1630
V
340
160
±20
±30
200
460
100
175
300
260
600
600
CES
10
10
1
6
±200
Max.
2.10
Nm/lb.in.
6.0
50
3
N/lb.
mA
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
V
V
V
A
g
g
J
V
I
V
t
TO-264 (IXXK)
PLUS247 (IXXX)
G = Gate
C = Collector
Features
Advantages
Applications
C110
fi(typ)
Optimized for 20-60kHz Switching
Square RBSOA
Avalanche Rated
Short Circuit Capability
High Current Handling Capability
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
C
E
G
= 600V
= 200A
= 80ns
C
≤ ≤ ≤ ≤ ≤ 2.1V
E
E
Tab = Collector
DS100373(08/11)
Tab
= Emitter
Tab

Related parts for IXXK200N60C3

IXXK200N60C3 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 100A 15V, Note 1 CE(sat © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXK200N60C3 IXXX200N60C3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ±30 340 160 200 460 100 = 1Ω 400 G CM ≤ ...

Page 2

... CES 98 47 100 3.0 125 80 1 4.0 150 90 2.1 0.15 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXK200N60C3 IXXX200N60C3 TO-264 Outline Max Terminals Gate 2,4 = Collector 3 = Emitter ns 2 0.092 °C/W °C/W ...

Page 3

... T = 25ºC 180 J 160 140 120 100 IXXK200N60C3 IXXX200N60C3 Fig. 2. Extended Output Characteristics @ T 13V = 15V GE 12V 11V 10V Volts CE Fig. 4. Dependence of V CE(sat) Junction Temperature V = 15V 200A C ...

Page 4

... DC 0.0001 100 1000 0.00001 IXXK200N60C3 IXXX200N60C3 Fig. 8. Gate Charge V = 300V 200A 10mA G 50 100 150 200 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150ºC J Ω ...

Page 5

... Ω 15V 360V CE 170 100 160 80 150 60 140 40 130 20 120 110 100 IXXK200N60C3 IXXX200N60C3 Fig. 14. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 360V 150º ...

Page 6

... I = 50A 100A 50A 100 125 150 IXXK200N60C3 IXXX200N60C3 Fig. 20. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 360V 25º ...

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