IXXA50N60B3 IXYS, IXXA50N60B3 Datasheet - Page 6

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IXXA50N60B3

Manufacturer Part Number
IXXA50N60B3
Description
XPT 600V
Manufacturer
IXYS
Datasheet

Specifications of IXXA50N60B3

Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
120
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
50
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
135
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
1.2
Rthjc, Max, Igbt (c/w)
0.25
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-263
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
180
160
140
120
100
240
200
160
120
80
60
40
20
80
40
0
25
5
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 21. Inductive Turn-on Switching Times vs.
I
I
t
R
V
t
T
V
C
C
r i
CE
G
r i
J
CE
= 36A
10
= 72A
= 150ºC, V
= 5
= 360V
= 360V
, V
50
15
GE
GE
= 15V
t
t
d(on)
Junction Temperature
d(on)
= 15V
20
T
J
Gate Resistance
- - - -
- - - -
- Degrees Centigrade
R
75
G
25
- Ohms
I
C
= 36A
30
I
100
C
= 72A
35
40
125
45
50
150
120
100
80
60
40
20
0
44
41
38
35
32
29
26
23
20
160
140
120
100
80
60
40
20
0
15
Fig. 20. Inductive Turn-on Switching Times vs.
R
V
t
20
r i
G
CE
= 5
= 360V
25
IXXA50N60B3 IXXP50N60B3
, V
GE
30
t
d(on)
= 15V
T
35
Collector Current
- - - -
J
= 150ºC
40
I
C
45
- Amperes
T
J
= 25ºC
50
55
IXXH50N60B3
60
IXYS REF: IXX_50N60B3D1(5D)02-23-11
65
70
75
44
41
38
35
32
29
26
23
20

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