IXXA50N60B3 IXYS, IXXA50N60B3 Datasheet - Page 4

• Manufacturer Part Number: IXXA50N60B3
• Description: XPT 600V
• Manufacturer: IXYS

Specifications of IXXA50N60B3

• Vces, (v): 600
• Ic25, Tc = 25°c, Igbt, (a): 120
• Ic90, Tc = 90°c, Igbt, (a): -
• Ic110, Tc = 110°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt (v): 1.8
• Tfi, Typ, Tj = 25°c, Igbt, (ns): 135
• Eoff, Typ, Tj = 125°c, Igbt (mj): -
• Eoff, Typ, Tj = 150°c, Igbt (mj): 1.2
• Rthjc, Max, Igbt (c/w): 0.25
• If, Tc = 90°c, Diode (a): -
• If, Tc = 110°c, Diode (a): -
• Rthjc, Max, Diode (k/w): -
• Package Style: TO-263

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1,000
100
100
10
32
28
24
20
16
12
10
1
0
8
4
0
1
0
0
V
CE(sat)
f
T
T
Single Pulse
= 1 MHz
J
C
= 175ºC
10
= 25ºC
Limit
5
Fig. 11. Forward-Bias Safe Operating Area
20
10
Fig. 7. Transconductance
10
30
Fig. 9. Capacitance
15
V
DS
I
V
40
C
CE
- Volts
- Amperes
- Volts
20
50
T
J
25
= - 40ºC, 25ºC, 150ºC
100
C ies
C oes
C res
60
30
70
35
DC
80
25µs
100µs
1ms
10ms
1000
40
90
0.01
0.1
0.4
16
14
12
10
110
100
0.00001
1
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0
0
100
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
T
R
dv / dt < 10V / ns
V
I
I
J
C
G
G
CE
= 150ºC
= 36A
= 10mA
= 5
= 300V
10
Ω
Fig. 10. Reverse-Bias Safe Operating Area
IXXA50N60B3 IXXP50N60B3
0.0001
200
20
Fig. 8. Gate Charge
Pulse Width - Second
Q
300
0.001
G
- NanoCoulombs
30
V
aaaasss
CE
- Volts
400
40
0.01
IXXH50N60B3
50
500
0.1
60
600
1
70