IXXA50N60B3 IXYS, IXXA50N60B3 Datasheet - Page 4
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IXXA50N60B3
Manufacturer Part Number
IXXA50N60B3
Description
XPT 600V
Manufacturer
IXYS
Datasheet
1.IXXP50N60B3.pdf
(6 pages)
Specifications of IXXA50N60B3
Vces, (v)
600
Ic25, Tc = 25°c, Igbt, (a)
120
Ic90, Tc = 90°c, Igbt, (a)
-
Ic110, Tc = 110°c, Igbt, (a)
50
Vce(sat), Typ, Tj = 25°c, Igbt (v)
1.8
Tfi, Typ, Tj = 25°c, Igbt, (ns)
135
Eoff, Typ, Tj = 125°c, Igbt (mj)
-
Eoff, Typ, Tj = 150°c, Igbt (mj)
1.2
Rthjc, Max, Igbt (c/w)
0.25
If, Tc = 90°c, Diode (a)
-
If, Tc = 110°c, Diode (a)
-
Rthjc, Max, Diode (k/w)
-
Package Style
TO-263
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1,000
100
100
10
32
28
24
20
16
12
10
1
0
8
4
0
1
0
0
V
CE(sat)
f
T
T
Single Pulse
= 1 MHz
J
C
= 175ºC
10
= 25ºC
Limit
5
Fig. 11. Forward-Bias Safe Operating Area
20
10
Fig. 7. Transconductance
10
30
Fig. 9. Capacitance
15
V
DS
I
V
40
C
CE
- Volts
- Amperes
- Volts
20
50
T
J
25
= - 40ºC, 25ºC, 150ºC
100
C ies
C oes
C res
60
30
70
35
DC
80
25µs
100µs
1ms
10ms
1000
40
90
0.01
0.1
0.4
16
14
12
10
110
100
0.00001
1
8
6
4
2
0
90
80
70
60
50
40
30
20
10
0
0
100
Fig. 12. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
T
R
dv / dt < 10V / ns
V
I
I
J
C
G
G
CE
= 150ºC
= 36A
= 10mA
= 5
= 300V
10
Ω
Fig. 10. Reverse-Bias Safe Operating Area
IXXA50N60B3 IXXP50N60B3
0.0001
200
20
Fig. 8. Gate Charge
Pulse Width - Second
Q
300
0.001
G
- NanoCoulombs
30
V
aaaasss
CE
- Volts
400
40
0.01
IXXH50N60B3
50
500
0.1
60
600
1
70